Kabushiki Kaisha Toshiba

Chisato Furukawa

Hideto Sugawara

Nobuhiro Suzuki

Koichi Nitta

Takafumi Nakamura

Masayuki Ishikawa

Kenji Isomoto

Satoshi Komoto

Kuniaki Konno

Takayuki Matsuyama

Yukio Watanabe

Haruhiko Okazaki

Masayuki Morishita

Takako Motai

Masaaki Ogawa

Wakana Nishiwaki

Nobuhir Suzuki

A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Semiconductor device and manufacturing method thereof

A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.

Light emitting device

A method for manufacturing a light emitting device, includes: preparing a first substrate by slicing a single crystal ingot pulled in a pulling direction tilted with respect to a first plane orientation, the slicing being in a direction substantially perpendicular to the pulling direction; preparing a second substrate including a major surface having a plane orientation substantially parallel to a plane orientation of a major surface of the first substrate; growing a stacked unit as a crystal on the major surface of the second substrate, the stacked unit including a light emitting layer; and removing the second substrate after bonding the stacked unit and the major surface of the first substrate by heating them in a joined state. A plane orientation of the major surface of the first substrate and a plane orientation of the major surface of the second substrate are one or another selected from a plane tilted from a (100) plane toward a [011] direction and a plane tilted from a (&#x2212;100) plane toward a [0-1-1] direction, respectively.

Method for manufacturing light emitting device and light emitting device

A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.

Light emitting device and method for manufacturing same

According to one embodiment, a light emitting element includes a semiconductor stacked body and a translucent substrate. The semiconductor stacked body includes a light emitting layer. The translucent substrate has one surface and a side surface. The semiconductor stacked body is provided on the upper surface. An unevenness uniformly distributing with average height and average pitch is provided on the side surface.

Light emitting element, method for manufacturing same, and light emitting device

According to one embodiment, a light emitting device includes a light emitting element, a molded body, a first sealing layer, and a converging lens. The light emitting element has a first surface and a second surface opposite to the first surface, with an optical axis of emission light being perpendicular to the second surface. The molded body includes a recess. The first surface side of the light emitting element is disposed in the recess. The first sealing layer covers the light emitting element in the recess and includes a first transparent resin and phosphor particles. The converging lens is provided on an upper surface of the first sealing layer and has a refractive index increasing with increase of distance from the optical axis. The refractive index at a position in contact with an outer edge of the upper surface of the first sealing layer is higher than a refractive index of the first transparent resin.

A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.

Semiconductor light emitting device

According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.

Semiconductor light-emitting element and semiconductor light-emitting device

A semiconductor light emitting element comprising:

Semiconductor light emitting element

Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.

Semiconductor light-emitting element

A semiconductor light emitting device ensuring a uniform color tone comprises a semiconductor light emitting element that emits light of a first wavelength upon injection of a current, a fluorescent material portion that contains a fluorescent material excited by light of the first wavelength to emit light of a second wavelength, and a diffuser mixed in an appropriate material around the semiconductor light emitting element.

Semiconductor light emitting device and method for manufacturing same

There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO in stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.

Semiconductor light emitting element and manufacturing method thereof

A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer.

Growing community of inventors

Atsugi, Japan

Chisato Furukawa