Applied Materials, Inc.

Chirantha P Rodrigo

Jingchun Zhang

Nitin K Ingle

Steven M Zuniga

Fred Conrad Redeker

Anchuan Wang

Brian J Brown

Saravjeet Singh

Suketu Arun Parikh

Jay Gurusamy

Tae Won Kim

Ekaterina A Mikhaylichenko

Lili Ji

Satya Gowthami Achanta

Tsz Keung Cheung

A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

Roller for location-specific wafer polishing

Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

Systems and methods for improved performance in semiconductor processing

The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

Hydrogen plasma based cleaning process for etch hardware

Growing community of inventors

Santa Clara, CA, United States of America

Chirantha P Rodrigo