Qualcomm Incorporated

Chintan Hemendrakumar Shah

Chiaming Chai

Stephen Edward Liles

Shaoping Ge

Satendra Kumar Maurya

Kunal Garg

Dynamic voltage level shifters employing pulse generation circuits are disclosed. In one aspect, a dynamic voltage level shifter includes a dynamic voltage level shifting circuit. The dynamic voltage level shifting circuit includes a pre-charge circuit configured to provide supply voltage of a first voltage domain to a dynamic node in response to a clock signal having pre-charge voltage. An evaluate circuit is configured to provide ground voltage to the dynamic node in response to an input signal having an active voltage while the clock signal has evaluate voltage. A keeper circuit is configured to provide a reduced drive strength to the dynamic node in response to pulse signal. The pulse signal is generated by a pulse generation circuit, wherein a pulse width of the pulse signal correlates to a difference in supply voltages of first and second voltage domains.

Dynamic voltage level shifters employing pulse generation circuits, and related systems and methods

An asynchronous memory includes a memory array, a sense amplifier, an output latch, and a controller. In response to a clock signal from an external circuit requesting a read operation, the controller provides the clock signal to the memory array to read data, and controls the sense amplifier and the output latch to provide the functionality of a flip-flop master and slave so that the read operation delay through the output latch to the external circuit is removed from a first read cycle of two sequential read cycles.

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Apex, NC, United States of America

Chintan Hemendrakumar Shah