Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Yueh Chen

Tzung-Shiun Liu

Chih-Chiang Tu

Wen-Hao Cheng

Cheng-Ming Lin

Chi-Ta Lu

Chue San Yoo

Wei-Chung Hu

Ting-Chang Hsu

Yu-Tung Chen

Chun-Lang Chen

Ming-Wei Chen

Chung-Hao Chang

Ai-Jay Ma

In a method of manufacturing a semiconductor device, in an EUV scanner, an EUV lithography operation using an EUV mask is performed on a photo resist layer formed over a semiconductor substrate. After the EUV lithography operation, the EUV mask is unloaded from a mask stage of the EUV scanner. The EUV mask is placed under a reduced pressure below an atmospheric pressure. The EUV mask is heated under the reduced pressure at a first temperature in a range from 100° C. to 350 C°. After the heating, the EUV mask is stored in a mask stocker.

Method of manufacturing semiconductor devices using a photomask

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Mask defect prevention

The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, a frame for securing the membrane on the substrate, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.

Lithographic mask, a pellicle therein and method of forming the same

An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.

Apparatus and method for developing a photoresist coated substrate

The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.

An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow. The injection nozzle is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.

Apparatus and a method of forming a particle shield

An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.

An apparatus for generating at least one particle shield. The at least one particle shield includes a first component and a second component. The first component and the second component are usable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object, the first particle shield is substantially parallel to and physically separated from the proximate surface of the object, and the first particle shield includes an energy gradient force or a velocity gradient force.

An apparatus for generating at least one particle shield in photolithography includes a first component and a second component. The first component and the second component are operable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object. The first component includes a first gas injector, and the second component includes a first gas extractor corresponding to the first gas injector. The first gas injector is configured to blow out a gas, thereby forming the first particle shield. The first gas extractor is configured to work with the first gas injector for providing gas pressure gradient for the first particle shield.

A method for repairing an attenuated phase shift mask providing an attenuated phase shift mask comprising an etched opening and at least one underlying light attenuating layer to reveal a quartz substrate the opening including an unetched portion comprising the at least one light attenuating layer; blanket depositing a negative photoresist layer over the at least one light blocking layer to include filling at a portion of the opening; exposing the negative photoresist layer through the quartz substrate and developing the negative photoresist layer to form a negative photoresist layer portion filling a portion of the opening; and carrying out a dry etching process to remove the unetched portion.

Method for repairing attenuated phase shift masks

A new method of provided for the creation of a rim-type phase-shift mask. Layers of phase shifter material, chrome and an etch resist mask having an opening having a first width are created. The layer of chrome is etched, the etch resist mask is removed. The layer of MoSiON is isotropically etched using the patterned and etched layer of chrome as a mask, partially removing the layer of MoSiON from under the chrome mask. A second layer of etch resist is deposited over the surface of the chrome mask, into the opening created through the layer of chrome and further over the surface of the rim of the mask. The second etch resist layer is exposed and developed, whereby the patterned and etched layer of chrome serves as a mask, thereby shielding from exposure and therefore leaving in place the second layer of etch resist where this second layer of photoresist overlies the rim of the phase shift mask. The remaining second layer of photoresist forms a protective layer for the layer of MoSiON. The quartz substrate is etched in accordance with the first width of the opening created through the second layer of etch resist, the second layer of etch resist is removed from above the rim surface areas of the phase shift mask. The patterned and etched layer of chrome is removed.

Growing community of inventors

Hsinchu, Taiwan

Ching-Yueh Chen