Taiwan Semiconductor Manufacturing Comp. Ltd.

Richtek Technology Corporation

Winbond Electronics Corporation

Ching-Yu Chen

Yu-Shine Lin

Jiang-He Xie

Hsing-Shen Huang

Wei-Ting Chang

Shui-Mu Lin

Chia-Hui Lin

Chui-Ya Peng

Hsiu-Han Liao

Shin-Yeu Tsai

Chin-Hui Wang

Chia-Ling Yeh

Ti-Ti Liu

Yung-Chun Chuang

Jung-Sheng Chen

Chien-Hua Lin

Chi-Hung Chao

Pravanshu Mohanta

Ting-Jung Lo

Chin-Yen Lin

A spread spectrum switching converter converts an input power to an output power. The spread spectrum switching converter includes a pulse width modulation (PWM) circuit and a pulse omission control circuit. The PWM circuit generate an initial PWM signal according to a feedback signal related to the output power. The initial PWM signal controls at least one switch to switch an inductor to generate the output power. The pulse omission control circuit generates a pulse omission control signal to mask a portion of pulses of the initial PWM signal, to thereby generate an adjusted PWM signal. The pulse omission control circuit randomly adjusts the pulse width of the pulse omission control signal according to a random control signal, such that the adjusted PWM signal has a spread spectrum characteristic.

Spread spectrum switching converter and spread spectrum control method thereof

Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

High Electron Mobility Transistor (HEMT) with a back barrier layer

Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Structures and methods for controlling dopant diffusion and activation

A driver circuit supplies a positive voltage and a negative voltage to a load. The driver circuit includes: a positive power conversion circuit, coupled to the load, and generating the positive voltage according to an input voltage; a negative power conversion circuit, coupled to the positive power conversion circuit and the load, and generating the negative voltage according to the positive voltage; and a headroom adaptive adjustment circuit, coupled to the positive power conversion circuit and the load, and generating an adjustment signal according to one or more of a load current flowing through the load, the positive voltage Vp and the negative voltage Vn. The adjustment signal is sent to the positive power conversion circuit to adjust a regulation target of the positive voltage.

Driver circuit supplying positive and negative voltages and control circuit and control method thereof

A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Semiconductor structures with shallow trench isolations

The present invention discloses a light emitting device array billboard and a control method thereof. The light emitting device array billboard includes a light emitting device array circuit, plural line switch circuits, plural channel switch circuits, plural ghost image compensation switch circuits, and a control circuit. The control circuit operates the line switch circuits and the channel switch circuit to turn ON a selected light emitting device for a duty period in a lighting period, and operates the plural ghost image compensation switch circuits to electrically connect a channel node corresponding to the selected light emitting device to a ghost image compensation voltage after the lighting period. The control circuit further adjusts a channel operation signal according to a gray scale compensation signal, to turn ON the selected light emitting device for a gray scale compensation period in addition to the duty period.

Light emitting device array billboard and control method thereof

A nonvolatile memory consisting of a substrate, a dielectric layer, word lines, word gates, conductive spacers, electron trapping layer, insulation layer and buried bit lines is provided. The dielectric layer is on the substrate and has several poly trenches thereon, and the word lines are disposed over the substrate across the poly trenches. The word gates are in the poly trenches between the word lines and the substrate, and the conductive spacers are between the word gates and the inner wall of each poly trench. The electron trapping layer is disposed between the conductive spacers and the inner wall of each poly trench and between the conductive spacers and the substrate. The insulation layer is between the conductive spacers and the word gates. The buried bit lines are in the substrate between the poly trenches.

Manufacturing method of non-volatile memory

Growing community of inventors

Hsinchu, Taiwan

Ching-Yu Chen