Shenzhen Adaps Photonics Technology Co. Ltd.

Ching-Ying Lu

Shuang Shuang Li

Ching-Jui Lu

Yangsen Kang

The present invention is directed to electrical circuits. In a specific embodiment, the present invention provides a Single-Photon Avalanche Detector (SPAD) circuit that includes a junction region that is characterized by a wave-shaped profile that corresponds to a plurality of filling structures. The wave-shaped profile is associated with electric field and breakdown voltage uniformity. There are other embodiments as well.

Single-photon avalanche diode devices with shaped junction regions

The present invention relates generally to sensing devices. In an embodiment, the present invention provides a SPAD pixel that includes a first region and a second region. An absorption region is configured within the first region. A first reflector array is configured within the second region and below the absorption region. A second reflector array is configured within the second region and below the first reflector array. The SPAD pixel also includes isolation structures configured within the first region.

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Shenzhen, China

Ching-Ying Lu