Taiwan Semiconductor Manufacturing Comp. Ltd.

Holtek Microelectronics Inc.

Ching-Yi Lin

Po-Hsiang Huang

Jyh Chwen Frank Lee

Fong-yuan Chang

Yu-Hao Chen

Shuo-Mao Chen

Fong-Yuan Chang

Po-Yu Chen

Chih-wei Chang

Kuo-Cheng Yu

Bao-Shiang Sun

A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Info packages including thermal dissipation blocks

A method includes: receiving a layout of an integrated circuit; identifying, based on the layout, at least a first net and at least a second net, wherein the first net extends through the integrated circuit along a vertical direction, and the second net terminates at a middle portion of the integrated circuit along the vertical direction; dividing the integrated circuit into a plurality of grid units, wherein the first net is constituted by a first subset of the plurality of grid units, and the second net is constituted by a second subset of the plurality of grid units; estimating a first thermal conductivity of each of the first subsets of grid units; estimating a second thermal conductivity of each of the second subsets of grid units; and estimating an equivalent thermal conductivity of the integrated circuit based on combining the first thermal conductivity and the second thermal conductivity.

Systems and methods of estimating thermal properties of semiconductor devices

A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

The present invention relates to a reset signal generator adapted to be used with a microprocessor for generating a reset signal to initialize the microprocessor, which includes an oscillator to generate a fixed clock signal, a counter electrically connected to the oscillator for generating a cyclic signal in response to the fixed clock signal and outputting the reset signal at an end of a period of the cyclic signal, and a clear signal generating device electrically connected to the counter and outputting a clear signal for the counter in response to an output signal from the microprocessor. The present invention ensures that when the microprocessor is abnormal or down it will be initialized by the reset signal.

Reset signal generator

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Zhubei, Taiwan

Ching-Yi Lin