General Electric Company

Ching-Yeu Wei

Robert F Kwasnick

George E Possin

Douglas Albagli

William Andrew Hennessy

Jianqiang Liu

David Francis Fobare

Michael C DeJule

Joseph M Pimbley

Brian W Giambattista

Charles Edward Baumgartner

Jack D Kingsley

Roger S Salisbury

Henry H Woodbury

Jeffrey Jon Shaw

Robert J Wojnarowski

Richard J Saia

William Hullinger Huber

Francis Howard Little

Thomas William Birdwell

Andrew Joseph Galish

Ralph Gerald Isaacs

Sung Su Han

Ji Ung Lee

Joseph Shappir

Gennady Gildenblat

Gerorge Edward Possin

James Zhengshe Liu

James Wilson Rose

Jeffrey Wayne Eberhard

Renato Guida

Peter Micah Sandvik

William Edward Burdick, Jr

Ping Xue

Yung S Liu

Jonathan David Short

Siegfried Aftergut

Donald Fayette Langler

Yun Li

Ji-Ung Lee

Sabarni Palit

Patricia A Piacente

Fengchao Zhang

Paul Justin Janiszewski

Haleh Ardebili

Xingguang Zhu

Robert Forrest Kwasnick

Roger Stephen Salisbury

Embodiments of a photodiode array are provided herein. In some embodiments, a photodiode array may include a semiconductor layer configured to convert photons into analog electrical signals; and a passive layer having a first surface and a second surface disposed opposite the first surface, wherein the semiconductor layer is coupled to the first surface, and wherein the passive layer is configured to have a signal receiving component coupled directly to the second surface of the passive layer.

Photodiode array for imaging applications

A radiation detector is provided that provides fast sequential image acquisition. In one embodiment, the radiation detector a diode capacitor that is charged in response to a radiation exposure event. The charge stored in the diode capacitor is transferred to a separate storage capacitor, allowing a new charge to be generated and stored at the diode capacitor.

Radiation detector for use in sequential image acquisition

A tiled imager panel is disclosed. In certain embodiments, the tiled imager panel is formed from separate imager chips that are mechanically tiled together so as to minimize the gap between the tiled imager chips. In addition, in certain embodiments, a scintillator material associated with the tiled imager panel is in a hermetically sealed environment so as to be protected from moisture.

Tiled X-ray imager panel and method of forming the same

A functional block for assembly includes at least one element and a patterned magnetic film comprising at least one magnetic region attached to the element. A wafer includes a host substrate comprising a number of elements. The wafer further includes a patterned magnetic film attached to the elements and comprising a number of magnetic regions. The magnetic regions are attached to respective ones of the elements. A method of manufacture includes forming a number of magnetic regions on a host substrate having an array of elements. The forming step provides at least one of the magnetic regions for a respective group comprising at least one of the elements.

Functional blocks for assembly

A fluidic assembly method includes dispersing a number of functional blocks in a fluid to form a slurry. Each of the functional blocks includes at least one element and a patterned magnetic film comprising at least one region. The fluidic assembly method further includes immersing at least a portion of an article in the fluid. The article includes a substrate, a number of receptor sites disposed on the substrate and a number of magnetic receptors, each of the magnetic receptors being disposed within a respective one of the receptor sites. A method of manufacturing an assembly includes disposing a number of functional blocks over at least a portion of an article, agitating the functional blocks relative to the article and assembling at least a subset of the functional blocks to the magnetic receptors on the article.

Methods for magnetically directed self assembly

Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

Thin-film transistor and diode array for an imager panel or the like

Systems, methods and apparatus are provided through which in some implementations field-effect-transistor (FET) leakage from a pixel array panel of a digital X-ray detector is reduced by acquiring an image and an offset image from the pixel array panel of the digital X-ray detector while a negative voltage of the pixel array panel is at a higher level than a negative voltage of a threshold state of the pixel array panel of the digital X-ray detector.

Systems, methods and apparatus for reduction of field-effect transistor leakage in a digital X-ray detector

A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.

Structured scintillator and systems employing structured scintillators

A digital X-ray panel and method of fabricating an X-ray detector panel assembly is provided. The method includes forming a detector matrix on the detector substrate, forming a dam on the detector substrate circumscribing the detector matrix, forming a scintillator material on the detector matrix, and forming a hermetic covering on the scintillator material that at least one of extends to a surface of the dam and extends past the dam. The digital X-ray panel assembly includes a detector substrate, a detector matrix formed on said detector substrate, a dam formed on said detector substrate circumscribing the detector matrix, a scintillator material formed on the detector matrix, and a hermetic covering formed on the scintillator material that at least one of extends past the detector matrix and the dam, and extends past the detector matrix onto a surface of the dam.

Method and apparatus for deposited hermetic cover for digital X-ray panel

Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Storage capacitor design for a solid state imager

A radiation detector assembly, in some aspects, includes a detector substrate and a detector matrix array disposed on the detector substrate. A scintillator material is disposed on the detector matrix array and a moisture resistant layer is disposed on the scintillator material. The moisture resistant layer includes a plurality of sub-layers. The assembly also includes a protective cover disposed over the detector substrate and the moisture resistant layer, and an adhesive material disposed between the detector substrate and the cover. The adhesive material in some configurations is disposed so that it is not in contact with the moisture resistant layer.

Direct scintillator coating for radiation detector assembly longevity

The present invention provides an X-ray detector assembly and a fabrication method, where the X-ray detector assembly includes a scintillator material disposed on a detector matrix array disposed on a detector substrate; and an encapsulating coating disposed on the scintillator material. The encapsulating coating includes a combination of a mono-chloro-poly-para-xylylene layer and a poly-para-xylylene layer. In one embodiment, a poly-para-xylylene layer is disposed over the scintillator material and a mono-chloro-poly-para-xylylene layer is disposed over the poly-para-xylylene layer.

Dual para-xylylene layers for an X-ray detector

The present invention provides an X-ray detector assembly and a fabrication method, where the X-ray detector assembly comprises a scintillator material disposed on a detector matrix array disposed on a detector substrate; an encapsulating coating disposed on the scintillator material; a moisture resistant cover disposed over the detector substrate and the encapsulating coating, and an adhesive material disposed between the detector substrate and the moisture resistant cover so as to form a moisture vapor barrier. The adhesive material is disposed so that it is not in contact with the encapsulating coating. The fabrication method of the X-ray detector assembly includes the steps of disposing the encapsulating coating on the scintillator material and a portion of the detector substrate and removing the encapsulating coating from the portion of the detector substrate.

Direct CsI scintillator coating for improved digital X-ray detector assembly longevity

A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Imaging array and method for manufacturing same

A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

Imaging array and methods for fabricating same

Growing community of inventors

Niskayuna, NY, United States of America

Ching-Yeu Wei