Au Optronics Corporation

Ching-Yang Liu

Chain-Shu Hsu

Hsiang-Chih Hsiao

Yao-Min Liu

Jhong-Sian Wu

Yu-Hsing Liang

Chien-Lung Wang

Sai-Chang Liu

Jyun-Fong Jheng

Wei-Hsiang Lin

Shu-Wei Chu

Jhih-Jie Huang

An organic semiconductor material is provided. The organic semiconductor material includes a compound represented by formula (1): wherein r and s each independently represent a positive integer of 1 to 20; n represents a positive integer of 2 to 10000; X, Xand Xeach independently represent O, S, Se, Te, NR, RCR, RSiR, RGeR or RSnR; Yand Yeach independently represent H, F, Cl, CF, haloalkyl, CN, R, OR, SR, COOR or COR; and Z, Z, Zand Zeach independently represent H, F, Cl, CF, haloalkyl, CN, R, OR, SR, COOR or COR, wherein R represents alkyl group.

Organic semiconductor material and thin-film transistor

A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Pixel structure and electrical bridging structure

Growing community of inventors

Taipei, Taiwan

Ching-Yang Liu