Average Co-Inventor Count = 1.18
ph-index = 2
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Phison Electronics Corporation (20 from 694 patents)
2. Tsinghua University (1 from 4,312 patents)
21 patents:
1. 9507702 - Method of performing write access by distributing control rights to threads, memory controller and flash memory storage device using the same
2. 9032135 - Data protecting method, memory controller and memory storage device using the same
3. 8996933 - Memory management method, controller, and storage system
4. 8954705 - Memory space management method and memory controller and memory storage device and memory storage using the same
5. 8914587 - Multi-threaded memory operation using block write interruption after a number or threshold of pages have been written in order to service another request
6. 8832358 - Data writing method, memory controller and memory storage apparatus
7. 8831229 - Key transport method, memory controller and memory storage apparatus
8. 8812776 - Data writing method, and memory controller and memory storage device using the same
9. 8812756 - Method of dispatching and transmitting data streams, memory controller and storage apparatus
10. 8769243 - Apparatus with smart card chip for storing communication file in non-volatile memory
11. 8769309 - Flash memory storage system, and controller and method for anti-falsifying data thereof
12. 8595420 - Method for dispatching and transmitting data streams between host system and memory storage apparatus having non-volatile memory and smart card chip, memory controller, and memory storage apparatus
13. 8544424 - System, controller and method thereof for transmitting and distributing data stream
14. 8478963 - Method of dynamically switching partitions, memory card controller and memory card storage system
15. 8420166 - Method for preparing patterned metal oxide layer or patterned metal layer by using solution type precursor or sol-gel precursor