Opto Tech Corporation

Ching-Shih Ma

Chia-Liang Hsu

Chang-Da Tsai

Wei-Che Wu

Ming-Der Lin

Jung-kuei Hsu

San-bao Lin

A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Method for manufacturing a LED

A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Chip-bonding light emitting diode chip

The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved. The light-emitting diode comprises: a substrate; a first electrode formed on the bottom surface of the substrate; an epitaxial LED structure having a pn junction formed on the top surface of the substrate, and a groove formed on the epitaxial LED structure passing through the pn junction such that the epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and the groove having a side light-reflective layer and an insulating layer; a bottom insulating layer formed on the top surface of the first epitaxial LED region; a second electrode formed on the top surface of the bottom insulating layer; and a plurality of extending conductive contacts formed on the top surface of the second epitaxial LED region, each extending conductive contact connected to the second epitaxial LED region through an extending conductive wire.

Growing community of inventors

Hsinchu, Taiwan

Ching-Shih Ma