Apple Inc.

Ching-Sang Chuang

Jiun-Jye Chang

Shih Chang Chang

Chin-Wei Lin

Ting-Kuo Chang

Shinya Ono

Jung Yen Huang

Niva A Ran

Po-Chun Yeh

Chuan-Jung Lin

Themistoklis Afentakis

Caleb Coburn

Chieh-Wei Chen

Lei Yuan

Shang-Chih Lin

Doh-Hyoung Lee

Gihoon Choo

Takahide Ishii

Zino Lee

Yu-Wen Liu

Keisuke Omoto

Akira Matsudaira

Chih Pang Chang

Cheng Min Hu

Chih-Hung Yu

Xingfeng He

Yung Fong Kao

Shih Lun Huang

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Organic light-emitting diode display with passive leakage-reducing structures

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.

Displays with silicon and semiconducting-oxide top-gate thin-film transistors

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Display circuitry with semiconducting oxide transistors

Organic light-emitting diode display with active leakage-reducing structures

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Sunnyvale, CA, United States of America

Ching-Sang Chuang