Apple Inc.

Au Optronics Corporation

Industrial Technology Research Institute

Other

Ching-Sang Chuang

Jiun-Jye Chang

Yu-Cheng Chen

Chih-Chiang Chen

Shih Chang Chang

Chin-Wei Lin

Ting-Kuo Chang

An-Thung Cho

Chia-Yu Chen

Chen-Yueh Li

Takahide Ishii

Shinya Ono

Shang-Chih Lin

Ching-Chieh Shih

Chin-Wei Hu

Keisuke Omoto

Yun Yu Wang

Wei Hsin Yao

Chaohao Wang

Hyunwoo Nho

Derek Keith Shaeffer

Abbas Jamshidi Roudbari

Warren S Rieutort-Louis

Hirokazu Yamagata

Chia-Tien Peng

Baris Cagdaser

Junhua Tan

Jae Won Choi

Hyunsoo Kim

Chia-Hsiang Chen

Kun-Chih Lin

Yuchi Che

Lun Tsai

Majid Gharghi

Hung-Che Ting

Chien-Ya Lee

Alex H Pai

Jung Yen Huang

Yongjun Li

Tsung-Hsiang Shih

Mohammad Reza Esmaeili Rad

Po-Chun Yeh

Xin Lin

Yu-Wen Liu

Kyounghwan Kim

Chin Wei Hsu

Hei Kam

Wen-I Hsieh

Hsin-Ying Chiu

Chih Pang Chang

Yu Hung Chen

Jehun Lee

Kenny Kim

Aida Raquel Colon-Berrios

Jonathan H Beck

Chang Ming Lu

Sheng Hui Shen

Kai-Chieh Wu

Chung-Wang Lee

Hsing-Chuan Wang

Fu-Yu Teng

Shihchang Chang

Ming E Tai

An electronic device may have a display with an active area configured to display images and an inactive area that is free of pixels and that does not display images. Touch sensor sense lines may have portions located in the active area and portions located in the inactive area. The active and inactive areas may be characterized by respective reflectivity values. To match the reflectivities of the active and inactive areas and thereby avoid undesired visually distinguishable differences in the appearances of these areas, the touch sensor circuitry in the inactive areas may be configured to match the reflectivity values of the active and inactive areas. Sense line portions in the inactive area may have metal traces of enhanced reflectivity and/or uneven surface topology to enhance ambient light reflections through a circular polarizer that overlaps the active and inactive areas.

Electronic device displays with visibly matched borders

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.

Displays with silicon and semiconducting-oxide top-gate thin-film transistors

Display panels with hydrogen trap layers are described. The hydrogen trap layers may be incorporated into a variety of locations to getter or block hydrogen diffusion into the semiconductor oxide layer of an oxide transistor.

Hydrogen trap layer for display device and the same

An electronic device includes an electronic display having an active area comprising a pixel. The electronic device also includes processing circuitry configured to receive image data and predict a change in threshold voltage associated with a transistor of the pixel based at least in part on the image data. Furthermore, the processing circuitry is configured to adjust the image data to generate adjusted image data based at least in part on the predicted change in threshold voltage.

Image data compensation based on predicted changes in threshold voltage of pixel transistors

A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Electrical components having metal traces with protected sidewalls

A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

Organic light-emitting diode display with bottom shields

This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by patterning the ohmic contact layer and the crystalline semiconductor layer at the same time with the same mask; and patterning the ohmic contact layer and the source/drain layer at the same time with another the same mask.

Transistor with etching stop layer and manufacturing method thereof

An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Active device array substrate

A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.

X-ray detector and fabrication method thereof

A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.

Method for fabricating active device array substrate

A forming method of the present invention includes forming a first patterned conductive layer, which includes a transparent conductive layer and a metal layer stacked together on a substrate, where the first patterned conductive layer functions as gate lines, gate electrodes, common lines and predetermined transparent pixel electrode structures; and forming a second patterned conductive layer on the substrate. The second patterned conductive layer includes data lines and reflective pixel electrodes, and be directly connected to doping regions, such as source regions/drain regions. According to the forming method of the present invention, pixel structures of a transflective liquid crystal display device can be formed through five mask processes. Therefore, the manufacturing process of the transflective liquid crystal display device is effectively simplified, so the product yield is improved and the cost can be reduced.

Method for forming pixel structure of transflective liquid crystal display

A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

Method of forming a top gate thin film transistor

A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.

Transflective liquid crystal display device having various cell gaps and method of fabricating the same

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Hsin-Chu, Taiwan

Ching-Sang Chuang