Megica Corporation

Megic Corporation

Megit Acquisition Corp.

Ching-San Lin

Chien-Kang Chou

Mou-Shiung Lin

Chiu-Ming Chou

Hsin-Jung Lo

Hsien-Tsung Liu

A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

Method of metal sputtering for integrated circuit metal routing

The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.

Semiconductor chip with post-passivation scheme formed over passivation layer

The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.

Semiconductor chip with passivation layer comprising metal interconnect and contact pads

A method of forming a device, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer The wafer is placed upon the wafer holder and is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of a metal barrier layer. The exposed portions of the metal barrier layer are etched and removed, exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

Growing community of inventors

Taichung County, Taiwan

Ching-San Lin