Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Pei Su

Yeur-Luen Tu

Cheng-Ta Wu

Yu-Hung Cheng

Tung-I Lin

A semiconductor wafer and method for manufacturing thereof are provided. The semiconductor wafer includes a handling substrate and a silicon layer over the handling substrate and having a {111} facet at an edge of a top surface of the silicon layer. The a defect count on the top surface of the silicon layer is less than about 15 each semiconductor wafer. The method includes the following operations: a semiconductor-on-insulator (SOI) substrate is provided, wherein the SOI substrate has a handling substrate, a silicon layer over the handling substrate, and a silicon germanium layer over the silicon layer; and the silicon germanium layer is etched at a first temperature with hydrochloric acid to expose a first surface of the silicon layer.

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Hsinchu, Taiwan

Ching-Pei Su