United Microelectronics Corp.

Ching-Nan Hwang

Chan-Lon Yang

Chiu-Te Lee

Ke-Feng Lin

Nien-Chung Li

Ching-I Li

Chun-Yao Yang

Ger-Pin Lin

Shih-Teng Huang

Ming-Yen Liu

Chi-Heng Lin

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.

Semiconductor device and method for fabricating the same

A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.

Semiconductor process

Growing community of inventors

Taichung, Taiwan

Ching-Nan Hwang