Delphi Technologies, Inc.

Stats Chippac Pte. Ltd.

Jcet Semiconductor (shaoxing) Co., Ltd.

Agere Systems Guardian Corp.

Ching Meng Fang

Yung Kuan Hsiao

Larry M Mandel

Yoke Hor Phua

See Chian Lim

Sim Ying Yong

Bartholomew Liao

Teck Tiong Tan

Kin Yean Chow

Linda Pei Ee Chua

Scott David Brandenburg

Hin Hwa Goh

Thomas Alan Degenkolb

Yaojian Lin

Kok Hua Chua

Kim Hwee Tan

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

Semiconductor device and method of stacking hybrid substrates with embedded electric components

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

Semiconductor device and method of forming ultra high density embedded semiconductor die package

An improved overmolded electronic assembly includes a backplate provided with a recessed edge, a circuit substrate on the backplate, at least one electronic component mounted on the circuit substrate, conductive traces on the circuit substrate which together with the electronic component(s) defines a circuit device, an electrical connector, and an overmold body that has peripheral edges that wrap around sides of the backplate and onto the edge recesses. The resulting over wrap feature eliminates delamination problems that would otherwise occur during thermal cycling of the electronic assembly, improves corrosion resistance at connector-to-backplate interfaces, and enhances securement of the printed circuit board assembly and electrical connector to the assembly.

Wrap-around overmold for electronic assembly

A partially overmolded component having a precisely defined overmolding edge includes a component having a protruding elongate rib and the overmolding having a terminal edge abutting the protruding elongate rib. The rib defines surfaces that provide a greater area of contact between the component and an overmolding tool and a more tortuous flow path to bleed-through.

Overmolded electronic assembly

An improved overmolded electronic assembly includes a backplate, a circuit substrate on the backplate, at least one electronic component mounted on the circuit substrate, conductive traces on the circuit substrate which together with the electronic component(s) defines a circuit device, an electrical connector, a metal ring on an outer side of a thermoplastic wall member of the electrical connector, and an overmold body. The metal ring circumscribes external connector pins of the electrical connector, and the overmold body together with the backplate and thermoplastic wall member of the electrical connector sealingly encase the circuit substrate and the circuit device defined on the substrate, with the overmold body having a peripheral edge in adhesive contact with the metal ring. The invention avoids delamination problems associate with similar arrangements which do not incorporate a metal ring.

Overmolded electronic assembly with metal seal ring

A mold has at least one vent hole formed in the mold. The vent hole is positioned to allow egress of air from the mold. The vent hole has an inside end and an outside end. The vent hole has a cross section that increases in area from the inside end to the outside end. The vent hole may have a shape of a trapezoidal prism, a truncated pyramid or a truncated cone; the cross section of the vent hole may be a rectangle. A preferred mold has three air vent holes at three corners of the mold. An integrated circuit is placed within the mold. A material to be molded is injected into the mold to encapsulate the integrated circuit. Mold cleaning is facilitated by the shape of the vent, and plastic flashes may be easily removed through the vent hole.

Encapsulated circuit using vented mold

Growing community of inventors

Singapore, Singapore

Ching Meng Fang