The Whitaker Corporation

Tyco Electronics Corporation

Other

Ching-Long Jiang

Randall Brian Wilson

Terry P Bowen

Richard Alan Anderson

John Baker Breedis

William Ring

Mark S Soler

Robert Addison Boudreau, Sr

Bill Henry Reysen

Mark Rafael Soler

Steven Patrick O'Neill

Eric Shek-Fai Mak

The present invention relates to a technique for fabricating a mechanical or visual alignment fiducial on a laser die particularly adapted for application with a laser die that is a buried structure edge emitting laser. In fabricating the device, the fiducial and the active mesa are formed in the same photolithography patterning step, using conventional techniques. The active is then buried with regrowth layers. The regrowth layers are subsequently selectively etched to expose the fiducial, leaving the active region protected and buried.

Method for fabricating fiducials for passive alignment of opto-electronic devices

An edge emitting laser comprising a substrate with or without a buffer layer having a central mesa disposed thereon, said central mesa having a bottom surface, a top surface and side surfaces and said mesa having an active layer disposed on said substrate with or without a buffer layer, a cladding layer disposed on said active layer, and a quaternary layer disposed on said cladding layer; first and second blocking layers disposed along said sides of said mesa; and at least one alignment fiducial disposed along an outer region of the laser, said alignment fiducial comprising at least a first surface and a second surface, said first surface being a certain distance from said active layer in the y-direction and said second surface being a certain distance from said active layer in the x-direction, said first surface comprising at least a portion of the top of said quaternary layer, said second surface comprising at least a portion of a side of at least one of said quaternary, cladding, or active layers.

Regrown notch laser

Passive alignment members for surface emitting and detecting optoelectronic devices having a silicon substrate with a front surface and a back surface and a selected thickness therebetween; side surfaces with holes having vertical registration surfaces etched therein for receiving alignment pins; and at least one optoelectronic device disposed on the front surface, the device being aligned to the hole.

Passive alignment member for vertical surface emitting/detecting device

A passive alignment scheme for aligning surface emitting/detecting optical electronic devices to optical fibers through the use of a mini-MT ferrule used in a RJ connector by way of silicon waterboard technology. The mini-MT ferrule has guide pins which are use to align the optical fiber ultimately to the optoelectronic device.

Optical coupling device for passive alignment of optoelectronic devices

A package for an optoelectronic device having an optical fiber in communication therewith. The parts of the package are generally of polymer material, preferably engineering thermoplastic, which is assembled to the fiber having the device mounted on a printed circuit board type material, FR4. The adhesion process of the individual parts of the package is done typically through a solvent bonding or an epoxy curing process that is done at room temperature, thereby eliminating the drawbacks of soldering at high temperature which has the attendant disadvantage of built in stress and thermal expansion resulting in misalignment of the individual parts. The related packaging technique greatly reduces the requirements of active alignment of the fiber to the device in the packaging of the device and fiber. Accordingly, the overall cost of the device is reduced by virtue of the reduced cost of the parts of the package as well as the process for fabrication of the package.

Packaging for optoelectronic device

Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Non-linearity of optical power output versus bias current is addressed by a heat dissipation scheme using the semi-insulative and conductive layers of the device.

Semi-insulating surface light emitting devices

Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Furthermore, a light absorbing layer is disposed on one side of an unetched portion of the semi-insulating material and an active layer disposed on opposite side. Also, the interface of the semi-insulating material and the active and absorbing layers are at prescribed angles that reduce back reflections to the absorbing and active layers. This arrangement reduces pumping in the absorbing region and thus reduces the lasing effect, allowing for a stable LED. The angle at the interface is determined by having the structure at a predetermined crystallographic direction and having the semi-insulating mesa etched to reveal a predetermined crystalline plane. Finally, in one embodiment of the invention, a channel is etched and filled with thermally conductive material to dissipate heat. This channel, in addition to the heat dissipation effected by the semi-insulating material enables a near linear light output versus current input characteristic for the device.

Method of fabricating semiconductor light emitting devices

Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Furthermore, a light absorbing layer is disposed on one side of an unetched portion of the semi-insulating material and an active layer disposed on an opposite side of the unetched portion. Also, the interface of the semi-insulating material and the active and absorbing layers are at prescribed angles that reduce back reflections to the absorbing and active layers. This arrangement reduces pumping in the absorbing region and thus reduces the lasing effect, allowing for a stable LED. The angle at the interface is determined by having the structure at a predetermined crystallographic direction and having the semi-insulating material etched to reveal a predetermined crystalline plane.

Growing community of inventors

Belle Mead, NJ, United States of America

Ching-Long Jiang