Tokyo Electron Limited

Intel Corporation

Applied Materials, Inc.

Kla-tencor Technologies Corporation

Tokyo Electron Limi Ted

Ching-Ling Meng

Xinkang Tian

Mihail Mihaylov

Manuel B Madriaga

Holger Tuitje

Junwei Bao

Hanyou Chu

Mihail Mihalov

Yan Chen

Joshua T Oen

Zheng Yan

Ping Wang

Shifang Li

Paul D Butterfield

Phillip R Sommer

Vi Vuong

Ivan Maleev

Jun Pei

Daehwan Daniel Kim

Wen Jin

Jason Ferns

Joel Ng

Ning-Yi Neil Wang

Anthony Tang

Weiwen Xu

Badru D Hyatt

Yan Sun

Haixing Zou

Qionglin Gao

An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Optical sensor for phase determination

An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.

Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber

Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

Spatially resolved optical emission spectroscopy (OES) in plasma processing

Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

Dark field wafer nano-defect inspection system with a singular beam

Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Differential acoustic time of flight measurement of temperature of semiconductor substrates

Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

System for in-situ film stack measurement during etching and etch control method

A method and system are provided for lamp temperature control for optical metrology. Precise control of the lamp temperature provides the improved signal-to-noise ratios required for accurately determining the profile of nanometer sized structures using optical metrology.

Method and system for lamp temperature control in optical metrology

Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet a plurality of design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a diffraction signal measured using the optical metrology system is transmitted to the fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster.

Automated process control using an optical metrology system optimized with design goals

Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet two or more design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set two or more design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Optical metrology system optimized with design goals

Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to the one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Designing an optical metrology system optimized with signal criteria

Provided is an apparatus for designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Apparatus for designing an optical metrology system optimized with signal criteria

Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet a plurality of design goals. Primary components of the optical metrology system affecting the design goals are determined and used in the initial design. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Optical metrology system optimized with a plurality of design goals

Provided is system and method for controlling a fabrication cluster using at least one parameter of a structure measured with an optical metrology system designed and configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for standalone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a signal measured using the optical metrology system is transmitted to a fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster.

Process control using an optical metrology system optimized with signal criteria

Gas purge systems and methods and a spectroscopic ellipsometer are disclosed. A purge gas system may include an input beam optics housing, a collection optics housing and a gas purge manifold. The input beam optics housing may include a first gas flow path between a first gas inlet and an aperture in a first nose cone proximate a measurement position. The collection optics housing may include a second gas flow path between a second gas inlet and an aperture in a second nose cone proximate the measurement position. The gas purge manifold may be disposed between the input beam optics housing and the collection optics housing. The gas purge manifold has a third gas flow path between a third gas inlet and an aperture in the gas manifold proximate the measurement position. The ellipsometer may include input beam optics in the input beam optics housing and collection optics in the collection optics housing. First, second, and third flows of purge gas may be supplied through the input beam optics housing, collection optics housing and gas purge manifold respectively. The purge gas is delivered directly to a measurement position of a surface of a substrate through the gas purge manifold, the first nosecone and the second nose cone.

Growing community of inventors

Sunnyvale, CA, United States of America

Ching-Ling Meng