National Taiwan University

Hannstar Display Corporation

Ching-Lin Fan

Tean-Sen Jen

Ming-Tien Lin

Bo-Jhang Sun

Yu-Zuo Lin

Shao-Wu Hsu

Ping-Cheng Chiu

Gow-Zin Yiu

Chang-Chih Lin

Chao-Hung Huang

A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.

Pixel unit of organic light emitting diode and display panel for achieving stable brightness using the same

An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Organic thin film transistor having peripheral metal structures

A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25&#xb0; C. and 150&#xb0; C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor

A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.

Method for defining windows with different etching depths simultaneously

Growing community of inventors

Keelung, Taiwan

Ching-Lin Fan