Genesis Photonics Inc.

Playnitride Inc.

Ching-Liang Lin

Yu-Chu Li

Shen-Jie Wang

Jyun-De Wu

Chi-Feng Huang

Chun-Chieh Lee

Kuan-Yung Liao

Yun-Li Li

Tzu-Yang Lin

Yu-Hung Lai

Chih-Ling Wu

Yen-Lin Lai

Pei-Hsin Chen

Pai-Yang Tsai

A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

Micro LED display panel

A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Display panel and repairing method therefor

A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlInGaN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlInGaN layers stacked on the light emitting layer, where 0&#x3c;x&#x3c;1, 0&#x2264;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, and the GaN based layer interposed between two of the AlInGaN layers, and the ohmic contact layer is disposed on the AlInGaN layers.

Semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlGaN (0&#x3c;x&#x3c;1) while the stress control layer is made from AlInGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;x+y&#x3c;1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InGaN, where 0&#x3c;x&#x3c;1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than &#x2212;0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.

Semiconductor light emitting device

A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a temporary substrate and light-emitting elements; disconnecting the light-emitting elements from the temporary substrate to allow the light-emitting elements to float on a fluid; adjusting spacings between the light-emitting elements to have a predetermined size by controlling flow of the fluid; placing a package substrate into the fluid, followed by aligning the light-emitting elements with connecting pads of the package substrate so as to correspondingly place the light-emitting elements on the connecting pads; and removing the package substrate with the light-emitting elements from the fluid.

Method for transferring light-emitting elements onto a package substrate

Nitride semiconductor structure and semiconductor light emitting device including the same

A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

Growing community of inventors

Tainan, Taiwan

Ching-Liang Lin