Au Optronics Corporation

Ching-Liang Huang

Jia-Hong Ye

Chun-Cheng Cheng

Chan-Jui Liu

Hsun-Yi Wang

Chiao-Li Huang

A display panel including a pixel circuit substrate, a planarization layer, a plurality of bonding pads, a plurality of light-emitting devices, a plurality of auxiliary electrodes, and a reflective structure layer is provided. The pixel circuit substrate has a plurality of signal lines. The planarization layer covers the signal lines. The bonding pads are disposed on the planarization layer and are electrically connected to the signal lines. The light-emitting devices are electrically bonded to the bonding pads. The auxiliary electrodes are disposed between the bonding pads. The reflective structure layer is disposed between the light-emitting devices and overlaps at least part of the auxiliary electrodes and the bonding pads. A method of fabricating the display panel is also provided.

Display panel and method of fabricating same

A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

Manufacturing method of a pair of different crystallized metal oxide layers

The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer.

Growing community of inventors

Hsinchu, Taiwan

Ching-Liang Huang