Micron Technology Incorporated

Nan Ya Technology Corporation

Ching-Kai Lin

Chao-Wen Lay

Tsai-Yu Huang

A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150&#xb0; C. to about 350&#xb0; C. and forming a second portion of titanium dioxide at a temperature of from about 350&#xb0; C. to about 600&#xb0; C. A high-k dielectric material is also disclosed.

High-k dielectric material and methods of forming the high-k dielectric material

A recess is usually formed on the sidewall of the trench due to the dry etch. The recess may influence the profile of an element formed in the trench. Therefore, a method of flattening a recess in a substrate is provided. The method includes: first, providing a substrate having a trench therein, wherein the trench has a sidewall comprising a recessed section and an unrecessed section. Then, a recessed section oxidation rate change step is performed to change an oxidation rate of the recessed section. Later, an oxidizing process is performed to the substrate so as to form a first oxide layer on the recessed section, and a second oxide layer on the unrecessed section, wherein the second oxide layer is thicker than the first oxide layer. Finally, the first oxide layer and the second oxide layer are removed to form a flattened sidewall of the trench.

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Boise, ID, United States of America

Ching-Kai Lin