Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Jing Wu

Mingni Chang

Shiou-Fan Chen

Yun-Chin Tsou

Chung-Liang Cheng

Chyi-Tsong Ni

Ming-Yih Wang

Yu-Ting Tsai

A method includes forming a plurality of low-k dielectric layers over a semiconductor substrate, forming a first plurality of dummy stacked structures extending into at least one of the plurality of low-k dielectric layers, forming a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers, and forming a second plurality of dummy stacked structures extending into the plurality of non-low-k dielectric layers. The second plurality of dummy stacked structures are over and connected to corresponding ones of the first plurality of dummy stacked structures. The method further includes etching the plurality of non-low-k dielectric layers, the plurality of low-k dielectric layers, and the semiconductor substrate to form a via opening. The via opening is encircled by the first plurality of dummy stacked structures and the second plurality of dummy stacked structures. The via opening is then filled to form a through-via.

Dummy stacked structures surrounding TSVs and method forming the same

A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.

Semiconductor arrangement and method of making

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Zaoqiao, Taiwan

Ching-Jing Wu