Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Hung Lai

Chi-Ming Tsai

Chin-Min Huang

Jia-Guei Jou

Yin-Chuan Chen

Chih-Chiang Tu

Ming-Ho Tsai

Chung-Hung Lin

Chih-Chung Huang

Che-Yuan Chang

A method for forming a photomask includes following operations. A first photomask is received. The first photomask includes a first pattern and a first scattering bar. The first photomask is used to remove a first portion of a target layer to form a first opening and a second opening. The first opening corresponds to the first pattern, and the second opening corresponds to the first scattering bar. A second photomask is received. The second photomask includes a second pattern. The second photomask is used to remove a second portion of the target layer to form a third opening. The third opening corresponds to the second pattern. The second opening is widened to form the third opening using the second photomask.

Photomask and method for manufacturing photomask and semiconductor structure thereof

A method for forming a photomask is provided. The method includes: receiving an initial layout, the initial layout comprising a first pattern and a second pattern; decomposing the initial layout into a first layout including the first pattern and a second layout including the second pattern; inserting a third pattern into the first layout; overlapping the first layout including the first pattern and the third pattern to the second layout including the second pattern; increasing a width of the third pattern in the first layout overlapping the second pattern in the second layout to form a fourth pattern in the first layout; and outputting the first layout comprising the first pattern, the third pattern and the fourth pattern into a first photomask.

A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.

Photomask, photolithography system and manufacturing process

A method for forming a photomask is provided. The method includes: receiving an initial layout including a plurality of first patterns and a plurality of second patterns; decomposing the initial layout into a first layout including the plurality of first patterns and a second layout including the plurality of second patterns; inserting a plurality of third patterns into the first layout, wherein each of the plurality of third patterns is adjacent to at least one of the plurality of first patterns; comparing the first layout and the second layout; identifying a fourth pattern as an overlapping portion of the plurality of third patterns overlapping one of the plurality of second patterns; increasing a width of the fourth pattern; and outputting the first layout including the first patterns, the third patterns and the fourth patterns into a first photomask.

Method for manufacturing photomask and semiconductor thereof

A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 &#x3bc;mto 60000 &#x3bc;m. The second pattern has an area of 0.16 &#x3bc;mto 60000 &#x3bc;m. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.

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Taipei, Taiwan

Ching-Hung Lai