Chung-shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense

Ching-Hui ChiangLin

Yang-Kuao Kuo

Chia-Yi Hsiang

Te-Po Liu

Fu-Hsing Huang

Disclosed is a method for hot isostatic pressing a substrate. At first, a metal container is provided. Powder is filled in the metal container before the metal container is located in an oven. The metal container is subjected to isostatic pressing that includes heating and pressing. Thus, the metal container shrinks and presses on the powder evenly and turns the powder into a nugget. The metal container is moved out of the oven and broken to release the nugget. A substrate is cut from the nugget. With the hot isostatic pressing, the substrate exhibits only a few flaws and is large, fine, homogenous and strong so that the substrate is not vulnerable to deformation in a high-pressure environment.

Method for hot isostatic pressing a substrate

Disclosed is a method for making a pure aluminum nitride substrate. At first, aluminum nitride is mixed with a water-resistant material and an adhesive material. The mixture is made into grains in a granulation process. The grains are molded into a nugget in a steel mode by hydraulic pressure. The nugget is subjected to a cold isostatic pressing process. At a low temperature, the water-resistant material and the adhesive material are removed from the nugget. Then, the nugget, boron nitride and nitrogen are introduced into and sintered in an oven, thus providing a pure aluminum nitride substrate. The purity and quality of the aluminum nitride substrate are high. The aluminum nitride substrate can be used in a light-emitting diode. The method is simple, the yield is high, and the heat radiation of the aluminum nitride substrate is excellent.

Method for making a wafer level aluminum nitride substrate

Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.

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Taoyuan County, Taiwan

Ching-Hui ChiangLin