Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Huang Chen

Hsin-Chang Lee

Ming-Wei Chen

Pei-Cheng Hsu

Ta-Cheng Lien

Hung-Yi Tsai

Hua-Tai Lin

Chi-Yuan Sun

Hung-Chang Hsieh

Ya Hui Chang

Kuei-Liang Lu

Shih-Che Wang

Yu-Chuan Yang

Wen-Ta Liang

Spencer Lin

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Methods of making a semiconductor device

EUV photo masks and manufacturing method thereof

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

EUV photomask

EUV mask

A photolithography system includes a substrate stage for holding a workpiece, and a mask having main patterns and sub-resolution assistant patterns. The system further includes a diffractive optical element (DOE) for directing a radiation having an aerial image of the main patterns onto the workpiece. The DOE includes a first pair of poles that is positioned symmetrically about a center of the DOE along a first direction. The main patterns are oriented lengthwise along a second direction that is perpendicular to the first direction. The sub-resolution assistant patterns are oriented lengthwise along the first direction.

Lithography patterning with sub-resolution assistant patterns and off-axis illumination

A device for semiconductor fabrication includes a substrate and a layer formed over the substrate, wherein the layer includes an alignment mark. The alignment mark includes a first plurality of elongated members that are oriented lengthwise along a first direction and are distributed along a second direction. The alignment mark further includes a second plurality of elongated members that are oriented lengthwise along a third direction perpendicular to the first direction and are distributed along the second direction, wherein the second direction is different from each of the first and third directions.

Lithography alignment marks

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Taipei, Taiwan

Ching-Huang Chen