Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Ching-Hsiang Tsai

Kei-Wei Chen

Chun-Hao Kung

Hui-Chi Huang

Chien-Chung Hung

Shang-Yu Wang

Chia-Jung Hsu

Kuei-Hung Shen

Hsin-Ying Ho

Kao-Feng Liao

Tung-Kai Chen

Fang-I Chih

Chih-Chieh Chang

Yuh-Wen Lee

Chao-Chiun Liang

Hui-Ling Chang

Chih-chieh Chang

Hui-chi Huang

Gen-Wen Hsieh

Ching-Wei Chang

Wei-chien Wang

Wei-Chin Lin

A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.

Chemical mechanical polishing method

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Mega-sonic vibration assisted chemical mechanical planarization

A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

Chemical mechanical polishing apparatus and method

A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.

A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Reader for magnetic shift register

A magnetic shift register memory in stack structure includes magnetic shift registering layers for forming an unit of stack structure. Each registering layer has multiple magnetic domains and each domain has a magnetization direction corresponding to a stored data. The two adjacent magnetic shift registering layers respectively have an upper magnetic domain and a lower magnetic domain forming a coupling region. By a coupling structure, the lower magnetic domain and the upper magnetic domain have the same stored data. A driving current unit is coupled to the magnetic shift registering layers for respectively providing a driving current in a predetermined direction to the magnetic shift registering layers. As a result, the stored data in the magnetic domains of the magnetic shift registering layers is shifted in a direction from a foremost registering layer to a last registering layer of the magnetic shift registering layers via the coupling structure.

Magnetic shift register memory in stack structure

A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.

Magnetic shift register and reading method

A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Magnetic shift register memory

A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Magnetic memory structure and operation method

A magnetic memory, a driving method thereof, and a manufacturing method thereof are provided. The magnetic memory includes a plurality of lead structures, a plurality of first magnetic metal structures, a second magnetic metal structure, and an insulation layer. Each of the first magnetic metal structures is disposed between adjacent two of the lead structures, and the second magnetic metal structure spans over the lead structures. A structure composed of the first magnetic metal structures and the second magnetic metal structure includes a plurality of magnetic memory cells connected with each other. Each of the magnetic memory cells has a magnetic domain and a domain wall adjacent to the magnetic domain, wherein the magnetic domain is suitable for storing a bit data.

Magnetic memory, driving method thereof, and manufacturing method thereof

A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

Liquid-based gravity-driven etching-stop technique for controlling structure dimension

An adjusting mechanism of the guide rod of the optical pick-up in an optical disk drive, including an optical disk drive chassis, an elastic fixture of the optical pick-up module, a substrate of the optical pick-up module, the guide rods of the optical pick-up, and adjusting screws, wherein the substrate of the optical pick-up module is fixed on the optical disk drive chassis by the elastic fixture of the optical pick-up module, and the vibration can be released by virtue of the elasticity, and to provide the fixture of the guide rod of the optical pick-up. Therefore, the incident angle of the laser beam can be adjusted by adjusting the screws to eliminate deviation of the incident angle due to the error of manufacture, then the number of part can be reduce, and the assembly process can be simplified, so the added value can be promoted.

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Kaohsiung, Taiwan

Ching-Hsiang Tsai