Ememory Technology Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Other

International Business Machines Corporation

Analog and Power Electronics Corp.

National Yang Ming Chiao Tung University

Chunghwa Picture Tubes, Ltd.

Powerflash Technology Corporation

Winbond Electronics Corporation

Powerchip Semiconductor Corporation

Worldwide Semiconductor Manufacturing Corporation

Programmable Microelectronics Corporation

Jen Wen Co., Ltd.

Ememory Technologies Inc.

Ching-Hsiang Hsu

Shih-Jye Shen

Ching-Sung Yang

Mong-Song Liang

Hsin-Ming Chen

Ruei-Ling Lin

Hai-Ming Lee

Feng Yuan Hsu

Steve S Chung

Ming-Chou Ho

Ching-Song Yang

Shyh-Chyi Wong

Kung-Hong Lee

Gary Y Hong

Wei-Zhe Wong

Chih-Hsun Chu

Ya-Chin King

Huang-Chung Cheng

Alexandre Acovic

Ming-Jang Lin

Chorng-Wei Liaw

Tian-Fure Shiue

Being S Wu

Chi-Ming Yang

Di-Son Kuo

Tran-Hui Shen

James Jeng-Jyi Hwang

Wei-Jye Lin

Hau-Luen Tien

Riichiro Shirota

Chrong-Jung Lin

Cheng-Tung Huang

Jih-Wen Chou

Matthew R Wordeman

Chyi Shyuan Chern

Chi-Neng Mo

Meng-Yi Wu

Shih-Chen Wang

Kaw-Yan Chua

Cheng-Jye Liu

Shih-Kang Fan

Chun-Hung Lu

Fu-Yuan Chen

Cheng-Pu Chiu

Mei-Tsao Chiang

Ta-chi Kuo

Nai Jen Yeh

Hsin-Fen Chou

Kelvin Yin-Yuh Doong

Kue-Hsiung Hsieh

Mi-Hua Tao

Su Lu

Wein-Town Sun

Hsu-Kai Chang

Len-Yi Leu

Nader A Radjy

Yen-Tai Lin

Shang-De Ted Chang

Bin-Shing Chen

Shih-Chan Huang

Sung-Chun Hsieh

Yih-Yuh Doong

Da-Chi Kuo

Evans Ching-Song Yang

Ming-Chiu Ho

Ya-Chin Kin

Tsu-Bin Shen

D C Kuo

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

EUV photomask and manufacturing method of the same

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Reticle-masking structure, extreme ultra violet apparatus, and method of forming the same

A random bit generator includes a voltage source, a bit data cell, and a sensing control circuit. The voltage source provides a scan voltage during enroll operations. The data cell includes a first transistor and a second transistor. The first transistor has a first terminal coupled to a first bit line, a second terminal coupled to the voltage source, and a control terminal. The second transistor has a first terminal coupled to a second bit line, a second terminal coupled to the voltage source, and a control terminal. The sensing control circuit is coupled to the first bit line and the second bit line, and outputs a random bit data according to currents generated through the first transistor and the second transistor during an enroll operation of the bit data cell.

Short channel effect based random bit generator

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.

A random code generator includes a power source, a sensing circuit, a first memory cell and a second memory cell. A first terminal of the first memory cell is connected with the power source. A second terminal of the first memory cell is connected with the sensing circuit. A first terminal of the second memory cell is connected with the power source. A second terminal of the second memory cell is connected with the sensing circuit. The power source provides a supplying voltage to both the first memory cell and the second memory cell during an enrollment. A random code is then determined according to the resistance difference between the first memory cell and the second memory cell after the enrollment.

Random code generator and associated random code generating method

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the protrusion structures are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the same

An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

Ellipsometer and method for estimating thickness of film

A storage cell includes a selection circuit, a first memory transistor, and a second memory transistor. The selection circuit is coupled to a source line and a common node. When the selection circuit is turned on, the selection circuit forms an electrical connection between the source line and the common node. The first memory transistor has a first terminal coupled to the common node, a second terminal coupled to a first bit line, and a control terminal coupled to a control line. The second memory transistor has a first terminal coupled to the common node, a second terminal coupled to a second bit line, and a control terminal coupled to the control line. The first memory transistor and the second memory transistor are 2-dimension charge-trapping devices or 3-dimension charge-trapping devices.

Storage cell using charge-trapping devices

A light generation system is provided. The light generation system includes a vaporization device, a laser device and a lens structure. The vaporization device is configured to vaporize a metal-nonmetal compound to generate a metal-nonmetal precursor gas. The laser device is configured to provide laser light, and irradiate the metal-nonmetal precursor gas released from the vaporization device with the laser light to emit a light signal. The lens structure is configured to direct the light signal toward a photomask used in a lithography process.

Light generation system using metal-nonmetal compound as precursor and related light generation method

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The magnetic substrate has a magnetic field, and the paramagnetic part has an induced magnetic field in a direction of the magnetic field of the magnetic substrate. The paramagnetic part includes a rough surface defined by a plurality of protrusion structures of the paramagnetic part. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

A random bit cell includes a latch, a voltage selector, a first non-volatile storage element, and a second non-volatile storage element. The latch has a first terminal coupled to a first local bit line, and a second terminal coupled to a second local bit line. The first non-volatile storage element has a first terminal coupled to the first local bit line, and a second terminal coupled to the voltage selector. The second non-volatile storage element has a first terminal coupled to the second local bit line, and a second terminal coupled to the voltage selector. During an initial operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element are floating. During an enroll operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element receive a program voltage from the voltage selector.

Random bit cell using an initial state of a latch to generate a random bit

The invention provides a code generating apparatus and an OTP memory block. The code generating apparatus of present disclosure includes a plurality of first one time programming (OTP) memory cells, a reference signal provider and a sense amplifier. The first OTP memory cells are coupled to a first bit line. The reference signal provider provides a reference signal. Wherein, at least one of the first OTP memory cells provides a read current to the first bit line, and the sense amplifier compares the read current and the reference signal to generate an output code. A current value of the reference signal is set within a range, and the range is set by the bit current corresponding to a maximum bit count, such as that the output code is determined by a manufacturing variation of the at least one first OTP memory cell.

Code generating apparatus and one time programming block

Growing community of inventors

Hsin-Chu, Taiwan

Ching-Hsiang Hsu