United Microelectronics Corp.

Ching-Ho Yang

Jung-Ching Chen

Shang-Chi Wu

Shyan-Yhu Wang

A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d. R=d/d, where 0.15&#x2266;R&#x2266;0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.

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Hsinchu, Taiwan

Ching-Ho Yang