Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Heng Liu

Yueh-Chuan Lee

Chia-Chan Chen

Ya-Wen Wu

Chang Yu Kuo

A semiconductor structure includes a first shallow trench isolation (STI) structure within a semiconductor substrate. The first STI structure includes a buffer structure, an adhesion structure, an electromagnetic reflection structure, and a fill structure. The adhesion structure is between and adhesively bonded to the buffer structure and the electromagnetic reflection structure. The electromagnetic reflection structure is between the adhesion structure and the fill structure to reflect electromagnetic radiation.

Semiconductor structure with isolation structure

A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

Growing community of inventors

Miaoli County, Taiwan

Ching-Heng Liu