Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Han Yeh

Kong-Beng Thei

Harry Chuang

Ming-Yuan Wu

Chen-Pin Hsu

A semiconductor device includes a semiconductor substrate, a source and a drain region formed on the semiconductor substrate, and a gate structure disposed on the substrate between the source and drain regions. The gate structure includes an interfacial layer formed over the substrate, a high-k dielectric formed over the interfacial layer, and a metal gate formed over the high-k dielectric that includes a first metal layer and a second metal layer, where the first metal layer is formed on a portion of the sidewalls of the gate structure and where the second metal layer is formed on another portion of the sidewalls of the gate structure.

Growing community of inventors

Taninan, Taiwan

Ching-Han Yeh