Epistar Corporation

Ching-Fu Tsai

Yu-Jiun Shen

Ta-Cheng Hsu

Wei-Chih Peng

Shih-Nan Yen

Jung-Tu Chiu

An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Optoelectronic device and method for manufacturing the same

A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.

Growing community of inventors

Hsinchu, Taiwan

Ching-Fu Tsai