Taiwan Semiconductor Manufacturing Comp. Ltd.

Global Unichip Corporation

Shine Yen Industrial Co., Ltd.

Ching-Fang Chen

Yun-Han Lee

Yi-Lin Chuang

Chih-Hsien Lin

Hsiang-Tai Lu

Chung-Sheng Yuan

Chin-Chou Liu

Tze-Chiang Huang

Chao-Yang Yeh

Igor Elkanovich

Yung-Sheng Fang

Pei Yu

Amnon Parnass

Li-Ken Yeh

Sheng-Wei Lin

King Ho Tam

Sandeep Kumar Goel

Hung-Chih Lin

Mill-Jer Wang

Jia-Jye Shen

Chuei-Tang Wang

Wei-Cheng Wu

Kuo-Ji Chen

William Wu Shen

Hsien-Hsin Sean Lee

Yung-Chin Hou

Wei-Li Chen

Shao-Yu Li

Wei-Pin Changchien

Ji-Jan Chen

Chang-Fen Hu

Lung-Shan Chen

Lien-Chin Chen

Chih-Peng Lin

Hao Chen

Huang-Yu Chen

Ching-Nen Peng

Meng-lin Chung

Chung-Han Huang

Wen-Wen Hsieh

Cheng-Pin Chiu

Chia Cheng Chen

Charles C C Liu

Jen Ping Hsu

A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a MOS transistor. A first source/drain region of the MOS transistor may be connected to the die-to-die interconnect.

Semiconductor and circuit structures, and related methods

A circuit test structure includes a chip including a conductive line which traces a perimeter of the chip. The circuit test structure further includes an interposer electrically connected to the chip, wherein the conductive line is over both the chip and the interposer. The circuit test structure further includes a test structure connected to the conductive line. The circuit test structure further includes a testing site, wherein the test structure is configured to electrically connect the testing site to the conductive line.

Circuit test structure and method of using

A method (of forming a three dimensional integrated circuit (3DIC) structure) includes: forming an interconnection layer including forming a first inter-layer via which connects at a first predetermined location to a first circuit region of a first device layer and which has a footprint that is at least one factor of ten smaller than a footprint of the first circuit region; and forming a first conductive segment in a first metallization layer of a second device layer so as to align with and thereby connect to the first inter-layer via.

Method of forming a semiconductor device with inter-layer vias

A circuit test structure includes an interposer for electrically connecting to a chip, wherein the interposer includes a conductive line, and the conductive line extends along at least two side of the interposer. The circuit test structure further includes a plurality of electrical connections to the conductive line. The circuit test structure further includes a testing site electrically connected to the conductive line, wherein the testing site is on an opposite surface of the interposer from the plurality of electrical connections.

A semiconductor device with an interface includes a master device and a plurality of slave devices. The master device includes a master interface. The slave devices are stacked on the master device one after one as a three-dimension (3D) stack. Each of the slave devices includes a slave interface and a managing circuit, the master interface and the slave interfaces form the interface for passing signals in communication between the master device and the slave devices. The managing circuit of a current one of the slave devices drives a next one of the slave devices. An operation command received at the current one of the slave devices is just passed to the next one of the slave devices through the interface. A response from the current one of the slave devices is passed back to the master device through the interface.

Semiconductor device in 3D stack with communication interface and managing method thereof

An interface for a semiconductor device is provided. The semiconductor device has a master device and multiple slave devices as stacked up with electric connection. The interface includes a master interface, implemented in the master device and including a master interface circuit with a master bond pattern. Further, a slave interface is implemented in each slave device and includes a slave interface circuit with a slave bond pattern to correspondingly connect to the master bond pattern. A clock route is to transmit a clock signal through the master interface and the slave interface. The master device transmits a command and a selecting slave identification through the master interface to all the slave interfaces. One of the slave devices corresponding to the selecting slave identification executes the command and responds a result back to the master device through the slave interfaces and the master interface.

Interface for semiconductor device and interfacing method thereof

A data protection system and a data protection method for handling an errored command are provided. The data protection system includes a master device and a slave device. The master device is configured to send command. The slave device is coupled to the master device. The save device is configured to receive the command from the master device. The master device includes a master interface. The slave device includes a slave interface. The master interface and the slave interface are electrically connected via one or plurality of bonds and/or TSVs and configured for interfacing between the master device and the slave device. The errored command represents the command having a parity or other error. The slave device is further configured to receive the errored command and to respond the errored command according to read or write operation.

Data protection system and method thereof for 3D semiconductor device

A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a PMOS transistor and an NMOS transistor. A first source/drain region of the PMOS transistor may be connected to a first source/drain region of the NMOS transistor and the die-to-die interconnect.

A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Test probing structure

A method, includes: extracting a design data using a computer, wherein the design data includes a net name and a connective layer name of each layout design in each cell; generating a layout pattern corresponding to the design data by assigning an ID to said each layout design, wherein the ID includes a first indicator indicative of the net name and a second indicator indicative of the connective layer name; and checking the layout pattern to locate an error of the layout pattern.

Method and associated system for circuit design

An interface for a semiconductor device includes a master device and a plurality of slave devices. The interface includes a master interface and a slave interface. The master interface is implemented in the master device and includes a master bond pattern of master bonds arranged as a first array. The slave interface is implemented each slave device and includes a slave bond pattern of slave bonds arranged as a second array. The first array of the master bonds includes a first central row and first data rows in two parts being symmetric to the first central row. The second array of the slave bonds includes a second central row and second data rows in two parts being symmetric to the second central row. The first central row and the second central row are aligned in connection, and the first data rows are connected to the second data rows.

Interface for semiconductor device with symmetric bond pattern and method for arranging interface thereof

A system (including a processor and memory with computer program code) that is configured to execute a method which includes generating the layout diagram including: selecting a circuit cell which includes an active element; bundling, for purposes of placement, the circuit cell and an inter-layer via together as an integral unit; placing the integral unit of the circuit cell and the inter-layer via in a first device layer of the layout diagram; and placing a metal pattern in a second device layer of the layout diagram; and wherein the placing the integral unit of the circuit cell and the inter-layer via forms a direct electrical connection channel between the circuit cell and the metal pattern.

System for layout design of structure with inter layer vias

An interface device and an interface method for interfacing between a master device and a slave device is provided. The master device generates command and the slave device generates data according to the command. The interface device includes a master interface and a slave interface. The master interface is coupled to the master device and configured to send the command to the slave device and/or receive the data from the slave device. The slave interface is coupled to the slave device and configured to receive the command from the master device and/or send the data to the master device. The master interface and the slave interface are driven by a clock generated by a clock generator. The master interface and the slave interface are electrically connected by one or plurality of bonds and/or TSVs.

Interface device and interface method for 3D semiconductor device

Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs. The EDA of the present disclosure can substitute the one or more electronic architectural models before, during, and/or after designing, simulating, analyzing, and/or verifying of the one or more electronic architectural designs to effectively decrease the time to market (TTM) for the electronic device.

Machine-learning design enablement platform

A circuit test structure including an interposer for electrically connection to a chip, wherein the interposer includes a conductive line, and the conductive line traces a perimeter of the interposer. The circuit test structure further includes at least three electrical connections to the conductive line. The circuit test structure further includes a testing site. The circuit test structure further includes a through substrate via (TSV) connecting the testing site to the conductive line.

Circuit test structure

Growing community of inventors

Taichung, Taiwan

Ching-Fang Chen