United Microelectronics Corp.

Tseng Mei Enterprise Co., Ltd.

Ching-Chung Chen

Cheng-Pang Yeh

Jiunn-Hsiung Liao

Chen-Bin Lin

Chi-Rong Lin

Tung-Hu Lin

Tze-Jing Chen

A multipurpose illumination device, specifically related to an illumination instrument that can be used as an electric torch, a night-light, an emergency aid or an indicator light. The device includes a column with three sections. A main section, which is a middle of the three, has a main light, a battery, circuits, a button switch and a power supply plug. An upper section located above the main section is made of transparent or semi-transparent material. A pedestal located below the main section is made of semi-transparent material.

Multipurpose illumination device

Light

A method of removing non-polar colorants of a color filter array rapidly from a bottom layer starts by performing a cracking process to decompose cross-linked polymeric molecules of non-polar R/G/B colorants to smaller fragments. A plasma cleaning process is performed to oxidize the cracked non-polar R/G/B colorants. Then, a solvent cleaning process is performed by using a non-polar solvent to remove the non-polar R/G/B colorants from the bottom layer.

Method of rapidly reworking color filters

A method of fabricating an image sensor on a semiconductor substrate including a sensor array region is introduced. First, an R/G/B color filter array (CFA) is formed on portions of the semiconductor substrate corresponding to the sensor array region. Then, a spacer layer is formed on the R/G/B CFA, and a plurality of U-lens is formed on the spacer layer corresponding to the R/G/B CFA. Afterwards, a buffer layer is coated to fill a space between the U-lens, and a low-temperature passivation layer is deposited on the buffer layer and the U-lens at a temperature of about 300&deg; C. or less to prevent the R/G/B CFA from damage.

Method of fabricating an image sensor

The present invention provides a method for increasing the adhesion of a color filter on a semiconductor wafer. The semiconductor wafer comprises a substrate, a plurality of MOS transistor sensors positioned on the substrate, and a plurality of insulators formed between two MOS transistor sensors on the substrate. The present invention first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor and each insulator. Thereafter, a passivation layer is formed on the dielectric layer, and a plurality of recesses is formed in the passivation layer corresponding to a MOS transistor sensor. Finally, a color filter is formed in each recess. The recess is used to increase the contact areas between the color filter and the passivation layer so as to prevent stripping of the color filter.

Method of forming a color filter

The present invention provides a method for increasing adhesion of color filters and preventing cross talk effects on a semiconductor wafer. The method first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor formed on the surface of the semiconductor wafer. Then, a plurality of metal layers are formed on the dielectric layer, each two metal layers positioned approximately above two ends of one MOS transistor sensor. Next, a passivation layer is formed, followed by the formation of a first color filter on the passivation layer. The two ends of the first color filter are aligned approximately above the two metal layers. Thereafter, a second color filter and a third color filter are sequentially formed on the passivation layer, and portions of both the second color filter and the third color filter cover one end of the first color filter. The portions of each color filter covering one other are used to enhance adhesion of the color filters, and simultaneously to function as barriers to prevent cross talk effects.

Growing community of inventors

Taipei Hsien, Taiwan

Ching-Chung Chen