Delta Electronics, Inc.

National Central University

Delta Electroncs, Inc.

Ching-Chuan Shiue

Shih-Peng Chen

Li-Fan Lin

Wen-Chia Liao

Huang-Kun Chen

Chun-Chieh Yang

Chao-Min Chen

Hsueh-Kuo Liao

Chuan-Chia Cheng

Jen-Inn Chyi

Po-Chin Chuang

Hsiang-Chen Wu

Horng-Jou Wang

Ming-Wei Tsai

Geng-Yen Lee

Tai-Kang Shing

Chi-Hsing Huang

Wei-Kai Shen

Chun-Lang Chen

Chun-Huang Cheng

A semiconductor device including an active layer made of III-V group semiconductors, a source electrode and a drain electrode disposed on the active layer, a gate electrode disposed on or above the active layer and between the source electrode and the drain electrode, an interlayer dielectric covering the source electrode, the drain electrode, and the gate electrode and having a plurality of inter-gate via holes. The semiconductor device further includes an inter-source layer, an inter-drain layer, and an inter-gate layer disposed on the interlayer dielectric. The semiconductor device further includes an inter-gate plug filled in the inter-gate via hole and electrically connected to the gate electrode and the inter-gate layer, and a gate field plate being separated from the gate electrode and electrically connected to the gate electrode through the inter-gate layer.

Heterojunction semiconductor device for reducing parasitic capacitance

A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an inter-source plug, an inter-drain layer, an inter-drain plug, an inter-gate layer, and an inter-gate plug. The active layer is made of III-V group semiconductors. The source electrode, the drain electrode, and the gate electrode are disposed on the active layer. The gate electrode is disposed between the source electrode and the drain electrode. The interlayer dielectric covers the source electrode, the drain electrode, and the gate electrode. The inter-source layer, the inter-drain layer, and the inter-gate layer are disposed on the interlayer dielectric. The inter-source plug is electrically connected to the source electrode and the inter-source layer. The inter-drain plug is electrically connected to the drain electrode and the inter-drain layer. The inter-gate plug is electrically connected to the gate electrode and the inter-gate layer.

The semiconductor device includes a substrate, a first GaN field effect transistor, a second GaN field effect transistor, and a GaN diode. The first GaN field effect transistor is disposed on or above the substrate, and the first GaN field effect transistor is a depletion mode field effect transistor. The second GaN field effect transistor is disposed on or above the substrate, and the second GaN field effect transistor is an enhancement mode field effect transistor. The GaN diode is disposed on or above the substrate. The first GaN field effect transistor, the second GaN field effect transistor, and the GaN diode are disposed on or above a same side of the substrate and electrically connected to each other.

Semiconductor device

A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.

Light emitting semiconductor

An illumination apparatus includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. The light emitted from the third light-emitting device is selectively mixed with the light emitted from the first light-emitting device or the second light-emitting device to form a white light having a chromaticity coordinate point substantially located on a Black Body Locus. A color of the light emitted from the third light-emitting device is determined by linear relationships between chromaticity coordinate points corresponding to wavelengths of the lights emitted form the first light-emitting device and the second light-emitting device and corresponding to a color temperature of the white light. A method for generating a white light is also disclosed herein.

Illumination apparatus and method for generating white light

A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed.

Light emitting element and light emitting module thereof

A semiconductor device including a substrate, a heterojunction body, a passivation layer, a source contact, a drain contact, and a gate contact. The heterojunction body disposed on or above the substrate includes a first semiconductor layer, a mask layer, a regrowth layer, and a second semiconductor layer. The first semiconductor layer is disposed on or above the substrate. The mask layer is disposed on or above a portion of the first semiconductor layer. The regrowth layer disposed on the first semiconductor layer and adjacent to the mask layer includes a main portion and at least one inclined portion. The second semiconductor layer is disposed on the mask layer and the regrowth layer. The passivation layer is disposed on the second semiconductor layer. The gate contact is disposed on the passivation layer, between the source contact and the drain contact, and at least above the inclined portion of the regrowth layer.

Semiconductor device and manufacturing method thereof

An illuminating device includes a substrate, an illuminating element, at least one barricade and at least one cover layer. The illuminating element is disposed on the substrate. The barricade is protruded from a surface of the substrate and disposed around the illuminating element continuously or discontinuously to form a first accommodating area. The cover layer is disposed in the first accommodating area for covering the illuminating element.

Illuminating device and packaging method thereof

Light emitting semiconductor element and method of manufacturing the same

A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N&#x2014;GaN), a light emitting layer, and a second semiconductor layer (P&#x2014;GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Light emitting diode devices and manufacturing method thereof

An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.

Electroluminescent module with thermal-conducting carrier substrate

A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Light-emitting diode apparatus and manufacturing method thereof

An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Growing community of inventors

Taoyuan Hsien, Taiwan

Ching-Chuan Shiue