Industrial Technology Research Institute

Ching-Chih Hsu

Yu-Sheng Chen

Heng-Yuan Lee

Pang-Shiu Chen

Yen-Ya Hsu

Frederick Chen

A control method for at least one memory cell is disclosed. The memory cell includes a transistor and a resistor. The resistor is connected to the transistor in series between a first node and a second node. In a programming mode, the memory cell is programmed. When it is determined that the memory cell has been successfully programmed, impedance of the memory cell is in a first state. When it is determined that the memory cell has not been successfully programmed, a specific action is executed to reset the memory cell. The impedance of the memory cell is in a second state after the step resetting the memory cell. The impedance of the memory cell in the second state is higher than that of the memory cell in the first state.

Control method for memory cell

A control method for at least one memory cell is disclosed. The memory cell includes a transistor and a resistor. The resistor is connected to the transistor between a first node and a second node. In a programming mode, the memory cell is programmed. The step of programming the memory cell includes providing a first controlling voltage to a gate of the transistor, providing a first setting voltage to the first node, and providing a second setting voltage to the second node. When it is determined that the memory cell has been successfully programmed, a specific action is executed.

Growing community of inventors

Xinpu, Taiwan

Ching-Chih Hsu