Visera Technologies Company Limited

Ching-Chiang Wu

Yu-Chi Chang

Shin-Hong Kuo

Wei-Lung Tsai

Zong-Ru Tu

Han-Lin Wu

Hung-Jen Tsai

Huang-Jen Chen

Po-Hsiang Wang

Sheng-Chuan Cheng

Ho-Tai Lin

Chia-Chien Hsieh

Hao-Wei Liu

Yuan-Shuo Chang

Masafumi Sano

Ta-Yung Ni

An image sensor is provided. The image sensor includes a substrate, an isolation structure on the substrate, a photoelectric conversion layer, a transparent electrode layer, an encapsulation layer, a color filter layer, and a micro-lens. The isolation structure is electrically non-conductive and defines a plurality of pixel regions on the substrate. The isolation structure prevents cross-talk of electrical signals among pixels. The photoelectric conversion layer is disposed on the pixel regions defined by the isolation structure. The transparent electrode layer is disposed over the isolation structure and the photoelectric conversion layer. The encapsulation layer is disposed over the transparent electrode layer. The micro-lens is disposed on the color filter layer.

Image sensor and method of forming the same

An image sensor includes a plurality of liquid-lens units, which include: a lower electrode and an upper electrode; a dielectric layer disposed between the lower electrode and the upper electrode; a containment space disposed between the dielectric layer and the upper electrode; and a non-polar liquid and a polar liquid filled into the containment space, wherein the non-polar liquid and the polar liquid are immiscible with each other. The non-polar liquid is configured to occupy a first contact area on the dielectric layer under a first voltage, and a second contact area on the dielectric layer under a second voltage. The first contact area is larger than the second contact area, and the second voltage is higher than the first voltage.

Image sensor having liquid-lens units and method for detecting images

An optical device is provided. The optical device includes a substrate and a plurality of optical structures. The substrate includes a plurality of photoelectric conversion elements. The optical structures are disposed above the substrate. Each optical structure corresponds to one photoelectric conversion element. Each optical structure includes a first portion and a second portion. The first portion has a first glass transition temperature. The second portion has a second glass transition temperature. The second portion guides the incident light into the photoelectric conversion element. The first glass transition temperature is higher than the second glass transition temperature.

Optical devices

An image sensor is provided. The image sensor includes a substrate, first photodiodes, second photodiodes, an interlayer, a light-guiding structure, and a micro-lens layer. The first photodiodes and the second photodiodes are alternately disposed in the substrate. The area of each of the first photodiodes is less than the area of each of the second photodiodes from a top view. The interlayer is disposed on the substrate. The light-guiding structure is disposed in the interlayer and over at least one of the first photodiodes or the second photodiodes. The refractive index of the light-guiding structure is greater than the refractive index of the interlayer. The micro-lens layer is disposed on the interlayer.

Image sensor

An image sensor is provided. The image sensor includes a substrate and isolation structures disposed on the substrate. The isolation structures are electrically non-conductive and define pixel regions. The image sensor also includes electrodes disposed on the substrate and in direct contact with the isolation structures. The image sensor further includes an active layer disposed between the isolation structures. Moreover, the image sensor includes an encapsulation layer disposed over the active layer. The image sensor also includes a color filter layer disposed over the encapsulation layer.

An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements. The solid-state image sensor also includes a mosaic pattern layer disposed above the photoelectric conversion elements. The mosaic pattern layer includes an infrared-passing segment and color filter segments disposed on the periphery of the infrared-passing segment. The solid-state image sensor further includes a first condensing structure disposed on the mosaic pattern layer. The infrared-passing segment and the color filter segments share the first condensing structure.

Solid-state image sensor

An optical sensor includes an optical layer disposed on a substrate, and a light shielding layer disposed on the optical layer, wherein the light shielding layer includes a first opening that partially exposes the optical layer. The optical sensor also includes a polymer material layer that fills the first opening, wherein a top surface of the polymer material layer is higher than a top surface of the light shielding layer. The optical sensor further includes an adhesive layer disposed on the light shielding layer and the polymer material layer, and a surface component disposed on the adhesive layer.

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Zhubei, Taiwan

Ching-Chiang Wu