Industrial Technology Research Institute

Ching-Chen Wu

Jau-Chyn Huang

Tai-Chou Lee

Wen-Sheng Chang

Kong-Wei Cheng

Ching-Sung Hsiao

Kan-Lin Hsueh

Ming-Shan Jeng

Chang-Chung Yang

Chun-Hsing Wu

Pei-Chun Chen

A channel plate structure includes a nonreactive portion and an electrochemical reactive portion. The nonreactive portion includes at least one manifold inlet, at least one manifold outlet, flow channels, and cutoff structures. The cutoff structures are respectively disposed in the flow channels, and the ratio of the total area of the cutoff structures to the area of the channel plate structure is 0.002 to 0.01 based on battery size. Each of the cutoff structures includes a gas-liquid separation compartment, a joint portion, and a convergent portion, wherein a width of the joint portion is smaller than or equal to that of the gas-liquid separation compartment, the convergent portion connects the gas-liquid separation compartment to the joint portion, and the cross-sectional area of a flow path at an downstream end of the convergent portion is smaller than that of the flow path at an upstream end of the same.

Channel plate structure and electrochemical apparatus with the same

An electrolyte composition and an energy storage device employing the same are provided. The electrolyte composition includes a solid and a solution. The solid includes a core and a metal layer encapsulating the core, where the metal layer is selected from a group consisting of Zn, Al, Mg, Li, Na and the metal oxides thereof. In particular, the solid has a first density and the solution has a second density, and the ratio between the first density and the second density is from about 0.97 to 1.03.

Electrolyte composition, and energy storage device employing the same

A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.

Method and apparatus of growing a thin film

A method and apparatus are provided for growing a composite metal sulphide photcatalyst thin film, wherein photochemical deposition and chemical bath deposition are both performed for growing the composite metal sulphide thin film, such as (AgInS)/(ZnS), wherein x is 0-1.

Method and apparatus for growing a composite metal sulfide photocatalyst thin film

Photo energy transformation catalysts and methods for fabricating the same are provided. The method includes mixing a solution containing a positive valence element of Group IB, a solution containing a positive valence element of Group IIIA, and a solution containing a negative valence element of Group VIA to obtain a composition and forming a film from the composition by liquid phase deposition, wherein the film contains compounds including the elements of Group IB, Group IIIA, and Group VIA.

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Taichung, Taiwan

Ching-Chen Wu