Taiwan Semiconductor Manufacturing Comp. Ltd.

Chin-Yuan Huang

Kai-Yun Lin

Chewn-Pu Jou

Shuo-Mao Chen

Yi-Kan Cheng

Feng Wei Kuo

Ho-Hsiang Chen

Chih Ming Yang

Chau-Wen Wei

Cheng-Te Chang

Po-Hsiang Huang

Chin-Chou Liu

Fong-Yuan Chang

Chin-Her Chien

Cheng-Hung Yeh

Kai-Ming Liu

Yao-Hsien Tsai

Tai-Yu Wang

Ming-Ke Tsai

A method of verifying an integrated circuit stack includes adding a first dummy layer to a first contact pad of a circuit, wherein a location of the first dummy layer is determined based on a location of a second contact pad of a connecting substrate. The method further includes converting the first dummy layer location to the connecting substrate. The method further includes adjusting the first dummy layer location in the circuit in response to a determination that the first dummy layer location is misaligned with the second contact pad. The method further includes performing a first layout versus schematic (LVS) check of the connecting substrate including the first dummy layer in response to a determination that the first dummy layer is aligned with the second contact pad.

Integrated circuit stack verification method and system for performing the same

A method of verifying an integrated circuit stack includes adding a dummy layer to a contact pad of a functional circuit, wherein a location of the dummy layer is determined based on a location of a contact pad of a connecting substrate. The method further includes converting the dummy layer location to the connecting substrate. The method further includes performing a layout versus schematic (LVS) check of the connecting substrate including the dummy layer in response to a determination that the dummy layer is aligned with the contact pad of the connecting substrate.

A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.

Package structure and method for forming the same

A method of verifying an integrated circuit stack includes adding a dummy layer to a contact pad of a functional circuit, wherein a location of the dummy layer is determined based on a location of a contact pad of a connecting substrate. The method further includes converting the dummy layer location to the connecting substrate. The method further includes determining whether the dummy layer is aligned with the contact pad of the connecting substrate. The method further includes adjusting the dummy layer location in the functional circuit when the dummy layer location is misaligned with the contact pad of the connecting substrate.

A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.

Method and apparatus for modeling multi-terminal MOS device for LVS and PDK

A method of verifying an integrated circuit stack includes adding a dummy layer to a contact pad of a functional circuit, wherein a location of the dummy layer is determined based on a location of a contact pad of a connecting substrate. The method further includes converting the dummy layer location to the connecting substrate; and determining whether the dummy layer is aligned with the contact pad of the connecting substrate. The method further includes performing an LVS check of the connecting substrate including the dummy layer; and adjusting the dummy layer location in the functional circuit if the dummy layer location is misaligned with the contact pad of the connecting substrate or the connecting substrate fails the LVS check. The method further includes repeating the converting step, the determining step, and the performing the LVS check step based on the adjusted dummy layer location.

An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.

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Hsinchu, Taiwan

Chin-Yuan Huang