Industrial Technology Research Institute

Chin-Yuan Chen

Chao-Nien Huang

Jin-Kuo Ho

Lung-Han Peng

Biing-Jye Lee

Charng-Shyang Jong

Chienchia Chiu

Chenn-shiung Cheng

Ming-Huang Hong

Kwang Kuo Shih

Tzer-Perng Chen

Ming-Jiunn Jou

Chih-Wei Chuang

Fei-Chang Hwang

Eric G Lean

Kwang-Kuo Shih

Yi-Chien Hsu

Jyi-Ren Deng

Jenn-Yu Kao

An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.

Ohmic contact to semiconductor devices and method of manufacturing the same

A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.

Method of oxidizing nitride material enhanced by illumination with UV light at room temperature

A white light-emitting diode and a method of fabricating the same diode are disclosed. The white light-emitting diode is fabricated by epitaxy, which can produce two peaks in the spectrum at the P-N junction by appropriately adjusting epitaxial parameters such as temperature, pressure, NH.sub.3 flux and the ratio of H.sub.2 to N.sub.2 or the concentration of dopant, such as Mg or Si. The diode can thus radiate white light by adjusting the wavelength and the intensity of the principal peak in the two peaks. Further, quantum well structure can be formed in the diode. By appropriately adjusting the epitaxial parameters, the spectrum of the quantum well structures may have more than one peak. Therefore, white light can be generated by combining the light with wavelengths at two or three different peaks. The white LED can radiate white light itself and need not involve combining many LEDs, so that the cost and the difficulty of fabricating the white LED lamp can be reduced. Moreover, the white LED can radiate white light itself, and does not need to excite fluorescent material to radiate white light. Accordingly, the lifetime of the white LED lamp is not limited by the relatively short lifetime of fluorescent material.

White light-emitting diode and method of manufacturing the same

A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.

Method for etching nitride

A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C. Therefore, in the invention, when a diode structure is manufactured with gallium nitride, the hydrogen atoms can be dissociated from the gallium nitride in a low-temperature process, thereby activating the magnesium (acceptor), such that the conductivity of the P-type gallium nitride is further increased and V.sub.N gap defects caused by a high-temperature process are prevented.

Method for forming P-type gallium nitride

A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.

Light emitting diode

Growing community of inventors

Hsinchu, Taiwan

Chin-Yuan Chen