Taiwan Semiconductor Manufacturing Comp. Ltd.

Vanguard International Semiconductor Corporation

Chin-Yu Ku

Chen-Shien Chen

Hon-Lin Huang

Wei-Li Huang

Chi-Cheng Chen

Te-Hsun Pang

Kuo-Chio Liu

Chen-Hsun Liu

Sheng-Pin Yang

Chung-Shi Liu

Alexander Kalnitsky

Yu-Nu Hsu

Ting-Li Yang

Ching-Hui Chen

Wei-Chih Huang

Chun-Yi Wu

Chen-Hua Douglas Yu

Mirng-Ji Lii

Wen-Hsiung Lu

Chien-Chih Chou

Rung-De Wang

Chien-Hung Kuo

De-Dui Liao

Chia-Hua Wang

Pei-Shing Tsai

Ching-Hua Hsieh

Cheng-Lin Huang

Chien-Ming Huang

Yi-Yang Lei

Wen-Ming Chen

Kuo-Pin Chang

Chun-Yen Lo

Cheng-Yu Kuo

Kai-Di Wu

Chien-Chih Kuo

Chien-Pin Chan

Chao-Yi Wang

Chi-Hung Lin

Meng-Fu Shih

Yuan-Fu Liu

Yung-Chiuan Cheng

Kuang-Yi Wu

Jhao-Yi Wang

Hsi-Ching Wang

Tsung Lung Huang

Isaac Huang

Po-Chang Lin

Ming-Da Cheng

Hung-Jui Kuo

Ming-Che Ho

Yi-Wen Wu

Cheng-Hung Chen

Chih-Hung Su

Chien-Chen Li

Cheng-Lung Yang

Shih-Yen Chen

Chun-Chen Liu

Heng-Chi Huang

Chun-Ying Lin

Fu Wei Liu

Cheng-Nan Hsieh

Yuan-Feng Wu

Sen-Chi Chiang

Hsu-Hsien Chen

Lung-Kai Mao

Pi-Lan Chang

Li-Chieh Chou

Kuan-Chih Huang

Shin-Puu Jeng

Hsin-Chieh Huang

Sheng-Yu Wu

Chien-Hsiun Lee

Ta-Jen Yu

Hsiu-Mei Yu

Sheng-Hsiang Chiu

Yung-Sheng Lin

Cheng-Jen Lin

Yuh-Sen Chang

Hsiang-Wei Tseng

Wei-Lun Hsieh

Young-Chang Lien

Jheng-Jie Wong

Hsiang-Sheng Su

Tsung-Lung Huang

Kio-Chio Liu

Jheng-Hong Chen

Chun-Kai Tzeng

Yung-Chung Cheng

Tang-Wei Huang

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element partially covering the magnetic element. The semiconductor device structure further includes a conductive feature over the isolation element.

Semiconductor device structure with magnetic element

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.

Semiconductor device structure with a protection cap at an end portion of a conductive line

A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.

Method of forming semiconductor device having at least one via including concave portions on sidewall

A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.

Arched membrane structure for MEMS device

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Package structure with a barrier layer

Semiconductor device having at least one via including concave portions on sidewall

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.

A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs are in the semiconductor device. Each of the TSVs has a first surface and a second surface opposite to the first surface. The first seal ring is located in proximity to an edge of the semiconductor structure and is physically connected to the first surface of each of the TSVs. The second seal ring is physically connected to the second surface of each of the TSVs.

Semiconductor structure

A semiconductor device and method of forming the same are provided. The semiconductor device includes at least one substrate and an interconnection structure. The at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. The channel laterally penetrates through the at least one substrate. The interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. The through hole, the cavity and the channel are in spatial communication with each other.

Semiconductor device and methods of forming the same

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

Semiconductor device structure with magnetic element covered by polymer material

A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.

Forming bonding structures by using template layer as templates

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

Semiconductor device structure having protection caps on conductive lines

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Hsinchu, Taiwan

Chin-Yu Ku