Hon Hai Precision Industry Co., Ltd.

Ememory Technology Inc.

Yi-Jin Promold Enterprise Ltd.

Chin-Yi Chen

Hsin-Ming Chen

Meng-Yi Wu

Lun-Chun Chen

Yueh-Chia Wen

A connector against contrary flowing for medical treatment, as to its structure, it includes a connecting seat to connect with a transmitting pipe, an insertion connecting cap fixed on the connecting seat for insertion of an external connecting terminal and a needless injection cylinder, and an elastic valve plug provided between the connecting seat and the insertion connecting cap, when the injection cylinder is pulled out of the insertion connecting cap, the elastic valve plug can impede the reverse pressure generated by the transmitting pipe (or the connecting seat), in order to avoid generating reverse flow of blood of a patient to reduce pain.

Connector against contrary flowing for medical treatment

A portable electronic device and method for measuring electric current of an external electronic device by the portable electronic device are provided. The method includes detecting whether an external device is connected, through the earphone jack, or whether a simple headset is connected through the earphone jack. The earphone jack can pass audio signals from the headset, but if an external device is detected, software is implemented to measure the amplitude of electric current from the external electronic device.

Electronic device and method for measuring electric current of external electronic devices using the electronic device

Provided is an OTP memory cell including a first antifuse unit, a second antifuse unit, a select transistor, and a well region. The first and the second antifuse unit respectively include an antifuse layer and an antifuse gate disposed on a substrate in sequence. The select transistor includes a select gate, a gate dielectric layer, a first doped region, and a second doped region. The select gate is disposed on the substrate. The gate dielectric layer is disposed between the select gate and the substrate. The first and the second doped region are respectively disposed in the substrate at two sides of the select gate, wherein the second doped region is disposed in the substrate at the periphery of the first and the second antifuse unit. The well region is disposed in the substrate below the first and the second antifuse unit and is connected to the second doped region.

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Taipei, Taiwan

Chin-Yi Chen