National Chung Cheng University

United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Chin-Wei Wu

Lai-Kwan Chau

Tsuo-Wen Lu

Shu-Yen Chan

Tien-Chen Chan

Ger-Pin Lin

Chang-Yue Chiang

Chien-Hsing Chen

Wen-Hao Chen

Chao-Wen Chen

Yen-Ta Tseng

A self-referencing localized plasmon resonance sensing device and a system thereof are disclosed. The reference optical waveguide element is modified with a noble metal nanoparticle layer. The sensing optical waveguide element is modified with a noble metal nanoparticle layer, which is further modified with a recognition unit. The incident light is guided into the reference and the sensing optical waveguide elements to respectively generate localized plasmon resonance sensor signals. The reference and the sensing optical waveguide elements respectively have a calibration slope. The processor utilizes the calibration slopes to regulate the second difference generated by detecting with the sensing optical waveguide element. The processor utilizes a difference between the first difference, which is generated by detecting with the reference optical waveguide element, and the regulated second difference to obtain a sensor response.

Self-referencing localized plasmon resonance sensing device and system thereof

A semiconductor device includes a semiconductor substrate having a gate trench penetrating through an active area and a trench isolation region surrounding the active area. The gate trench exposes a sidewall of the active area and a sidewall of the trench isolation region. The sidewall of the trench isolation region includes a void. A first gate dielectric layer conformally covers the sidewall of the active area and the sidewall of the trench isolation region. The void in the sidewall of the trench isolation region is filled with the first gate dielectric layer. A second gate dielectric layer is grown on the sidewall of the active area. A gate is embedded in the gate trench.

Semiconductor device and fabrication method thereof

A method for fixing metal onto a surface of the substrate. The present method includes steps of: providing a substrate and a mercaptoalkylsilatrane compound; dissolving the mercaptoalkylsilatrane compound in a solvent; performing a condensation reaction of the substrate with and the dissolved mercaptoalkylsilatrane compound to complete the surface modification of the substrate; and performing a covalent bonding process to metal with the mercaptoalkylsilatrane compound already modified onto the surface of the substrate to fix the metal onto the surface of the substrate.

Method for fixing metal onto surface of substrate

Growing community of inventors

Hsinchu, Taiwan

Chin-Wei Wu