Taiwan Semiconductor Manufacturing Comp. Ltd.

Leadtek Research Inc.

Chin-Tien Yang

Yu-Hua Lee

Chia-Hung Lai

Min Cao

Tzong-Sheng Chang

Jiunn-Jyi Lin

Huan-Chi Tseng

Mu-Yi Lin

Juan-Jann Jou

Yu-Wei Tseng

Min Ca

Chung-Hsi Chia

A method of videophone data transmission based on the PKI (Public Key Infrastructure) is executed with a videophone and a user. The method includes the steps of performing a connection procedure, performing a data download procedure and performing a disconnection procedure. While performing the connection procedure, a smart key, which stores at least one piece of user identification data, is connected to a videophone. The user identification data contains an ID code, a password and a private key of the user. While performing the data download procedure, the user identification data is encrypted and transmitted to a service server for verifying the user. Then, at least one service provided by the service server is encrypted and downloaded to the videophone. After decryption, the at least one service can be executed in the videophone. While performing a disconnection procedure, the smart key is disconnected from the videophone.

Method of videophone data transmission

A method for manufacturing a dual damascene structure, which forms a trench first, is described. The manufacturing method has following steps. First, a substrate with a plurality of semiconductor devices is provided. A first metal layer, a first etching stop layer, a dielectric layer, and a second etching stop layer are subsequently formed thereon. A trench is formed in the dielectric layer at a predetermined depth thereafter, and a sacrificial layer is filled therein and is next planarized. Then a photoresist layer is formed thereon for etching a via. Afterward the photoresist layer and the sacrificial layer are both removed. Following that, the first etching stop layer is etched through to expose the first metal layer. Finally, the via and the trench are filled with a second metal layer.

Method for manufacturing dual damascene structure with a trench formed first

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes.

Bond pad scheme for Cu process

A dual bit ROM multilayered structure with improved write and erase functions and a method of manufacturing is disclosed. The structure includes a pair of floating gates at the middle or nitride layer to better define the two locations of electrons representing the dual data bits collected in the middle layer.

Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing

Growing community of inventors

Hsin-Chu, Taiwan

Chin-Tien Yang