Taiwan Semiconductor Manufacturing Comp. Ltd.

Chin-Te Huang

Chung-Te Lin

Huai-Tei Yang

Hsi-Kuei Cheng

Chun-Chang Chen

Yu-Ku Lin

Su-Yu Yeh

Sheng-Wen Chen

Jeng-Yang Pan

Jih-Hwa Wang

Jang-Cheng Hsieh

Chou-Jie Tsai

Jun-Yang Lai

Meng-Shiun Shieh

Yi-Lang Wang

Hung Fa Chen

Chen-Yi Huang

Ting-Chu Wang

A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.

Method and system for reducing wafer edge tungsten residue utilizing a spin etch

Liquid leaks from a vessel cause shorts between at least one elongate sensing wire and another conductor when the fluid absorbs into the porous sheath of the sensing wire. The other conductor may comprise a second elongate sensing wire having similar porous sheath or a conductive tray or other conductive collection means. The sensing wire is placed in proximity to the vessel, such as beneath or immediately adjacent. Shorts are detected from the electrical characteristics of a circuit including the sensing wire and location is determined therefrom.

Liquid leak detection

An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

Hoop support for semiconductor wafer

A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000&deg; C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.

Method for forming lining oxide in shallow trench isolation incorporating pre-annealing step

A stable silicon oxide film for use as a thickness reference is prepared by oxidizing a silicon wafer, having a smooth surface, under carefully controlled conditions thereby growing a film of known thickness and refractive index. This is followed by the deposition of a layer of silicon nitride over said oxide film. The resulting structure may then be used as a reference standard when ellipsometry is routinely employed for measuring the thickness of, for example, gate oxides in field effect devices. It has been found that the thickness of the reference layer remains stable over extended time periods without the need for frequent cleaning.

Stable thin film oxide standard

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Hsin-Chu, Taiwan

Chin-Te Huang