Lg Electronics Inc.

Chin Kyo Kim

Tae Kyung Yoo

Jae Hyung Yi

Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the same chamber. The present invention includes a chamber for loading a substrate therein, a heating means heating the chamber, a Ga boat installed inside the chamber to receive a Ga molecule producing material, an injection pipe injecting a nitrogen molecule producing gas in the chamber, the nitrogen molecule producing gas reacting chemically on the Ga molecule producing material to form a GaN layer on the substrate, and a transparent window at a circumference of the chamber to apply a laser beam to the substrate.

Apparatus for manufacturing GaN substrate and manufacturing method thereof

A nitride semiconductor light-emitting element is disclosed. An n type AlGaN cladding layer is grown on a GaN substrate, and an InGaN active layer of a quantum well structure is grown on the n type AlGaN cladding layer at a temperature of about 800&deg; C. or less. Subsequently, a buffer layer of any one of GaN, AlGaN, and InGaN is grown on the InGaN active layer at a temperature of about 900&deg; C. or less. A p type AlGaN cladding layer and a p type GaN electrode layer are sequentially grown on the buffer layer. A p type electrode is formed over the p type GaN electrode layer while an n type electrode is formed below the substrate or over the n type cladding layer. Thus, the nitride semiconductor light-emitting element having high efficiency optical characteristic and thermal characteristic can be obtained.

Nitride semiconductor light-emitting element and method for fabricating the same

GaN system compound semiconductor and method for growing a crystal thereof, which can significantly reduce a concentration of crystalline defects caused by lattice mismatch by growing a GaN system compound semiconductor of GaN or In Ga N by using In Al N crystal on a substrate as an intermediate buffer layer, the method including the steps of (1) providing a sapphire substrate, (2) growing an intermediate buffer layer of In Al N on the sapphire substrate, and (3) growing GaN or In Ga N system compound semiconductor on the intermediate buffer layer.

GaN system compound semiconductor and method for growing crystal thereof

Disclosed is a method for fabricating a smoothly surfaced GaN substrate. A GaN substrate is polished with diamond slurries and then, with boron carbide plates. The irreversible damaged layer which is caused by the mechanical polishing is removed by reactive ion etching, after which the GaN substrate is thermally treated to revive the recoverable damaged layer which is owed to the reactive ion etching. The resulting GaN substrate has a sufficiently smooth surface to allow subsequent thin films of high quality to grow thereon. Based on the GaN substrate of the present invention, blue light elements with excellent properties can be fabricated.

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Seoul, South Korea

Chin Kyo Kim