United Microelectronics Corp.

Chin-Jen Cheng

Yi-Ching Wu

Ming-Te Chen

Lian-Hua Shih

Jiann-Fu Chen

Chang-Sheng Hsu

Chia-Wei Lee

Chih-Fan Hu

Chang Hsin Wu

The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.

Structure of gas sensor

A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si&#x2014;H bonds and a plurality of N&#x2014;H bonds, and a ratio of Si&#x2014;H bonds to N&#x2014;H bonds being equal to or smaller than 0.5.

Method for fabricating a metal-insulator-metal capacitor

A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.

Metal-insulator-metal capacitor and method for fabricating the same

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Taipei, Taiwan

Chin-Jen Cheng