United Microelectronics Corp.

Chin-Hung Liu

Ming-Tsung Tung

Chien-Ming Lin

Anchor Chen

Hwi-Huang Chen

Chih-Hung Lin

Chin-Lung Chen

Jung-Ching Chen

Jih-Wei Liou

Wen-Kuo Li

An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two gate conductive layers configured on two first active regions of the substrate. A common source contact region having a second conductive type is configured in a second active region, which is configured between the two first active regions. An isolation structure is included for isolating the second active region and the first active regions. The isolation structure between the first active regions and the second active region has a length 'A' extending along a longitudinal direction of a channel under each gate conductive layer, and each gate conductive layer on each first active region has a length 'L' extending along the longitudinal direction of the channel, the two LDMOS devices have different A/L values.

IC chip

A method for fabricating metal-oxide-semiconductor devices is provided. The method includes forming a gate dielectric layer on a substrate; depositing a polysilicon layer on the gate dielectric layer; forming a resist mask on the polysilicon layer; etching the polysilicon layer not masked by the resist mask, thereby forming a gate electrode; etching a thickness of the gate dielectric layer not covered by the gate electrode; stripping the resist mask; forming a salicide block resist mask covering the gate electrode and a portions of the remaining gate dielectric layer; etching away the remaining gate dielectric layer not covered by the salicide block resist mask, thereby exposing the substrate and forming a salicide block lug portions on two opposite sides of the gate electrode; and making a metal layer react with the substrate, thereby forming a salicide layer that is kept a distance 'd' away from the gate electrode.

High voltage metal-oxide-semiconductor transistor devices and method of making the same

A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage device is disposed in the active region. The high-voltage device structure includes a source diffusion region of a first conductive type, a drain region of the first conductive type, and a gate longer than the source diffusion region and the drain diffusion region so as to form spare regions on both sides of the gate. The isolation region is outside the active region and surrounds the active region. In the isolation region, an isolation ion implantation region of a second conductive type and an extended ion implantation region are disposed to prevent parasitic current from being generating between the source diffusion region and the drain diffusion region.

High-voltage device structure

Growing community of inventors

Taipei Hsien, Taiwan

Chin-Hung Liu