Siliconware Precision Industries Co., Ltd.

Chin-Huang Chang

Chung-Lun Liu

Jung-Pin Huang

Chih-Ming Huang

Chin-Tien Chiu

Cheng-Hsu Hsiao

Chien-Ping Huang

Cheng-Chia Chiang

Yi-Feng Chang

Min-Nan Tsai

Jung-Ping Huang

Wei Lung Lu

Cheng Jen Liu

Cheng-Chian Chiang

Cheng-Lun Liu

A multi-chip stack structure and a method for fabricating the same are provided. The method for fabricating a multi-chip stack structure includes disposing a first chip group comprising a plurality of first chips on a chip carrier by using a step-like manner, disposing a second chip on the first chip on top of the first chip group, electrically connecting the first chip group and the second chip to the chip carrier through bonding wires, using film over wire (FOW) to stack a third chip on the first and the second chips with an insulative film provided therebetween, wherein the insulative film covers part of the ends of the bonding wires of the first chip on the top of the first group and at least part of the second chip, and electrically connecting the third chip to the chip carrier through bonding wires, thereby preventing directly disposing on a first chip a second chip having a planar size far smaller than that of the first chip as in the prior art that increases height of the entire structure and increases the wiring bonding difficultly.

Method for fabricating multi-chip stack structure

A multi-chip stack structure and a method for fabricating the same are provided. The method for fabricating a multi-chip stack structure includes disposing a first chip group comprising a plurality of first chips on a chip carrier by using a step-like manner, disposing a second chip on the first chip on top of the first chip group, electrically connecting the first chip group and the second chip to the chip carrier through bonding wires, using film over wire (FOW) to stack a third chip on the first and the second chips with an insulative film provided therebetween, wherein the insulative film covers part of the ends of the bonding wires of the first chip on the top of the first group and at least part of the second chip, and electrically connecting the third chip to the chip carrier through bonding wires, thereby preventing directly disposing on a first chip a second chip having a planar size far smaller than that of the first chip as in the prior art that increases height of the entire structure and increases the wiring bonding difficulty.

Multi-chip stack structure and method for fabricating the same

A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.

Fabrication method of semiconductor package device, and fabrication method of semiconductor package structure

Semiconductor package device, semiconductor package structure, and fabrication methods thereof

A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.

Fabrication method of multi-chip stack structure

Multi-chip stack structure and fabrication method thereof

A semiconductor package with stacked chips and a method for fabricating the same are proposed. The semiconductor package includes a lead frame having a plurality of leads and supporting extensions; at least one preformed package having an active surface, and a non-active surface attached to the supporting extensions of the lead frame; at least one chip mounted on the active surface of the preformed package; a plurality of bonding wires for electrically interconnecting the lead frame, the preformed package and the chip; and an encapsulant for encapsulating the preformed package, the chip, the bonding wire and a portion of the lead frame. The active surface of the preformed package serves for carrying the chip and can be used as a wire jumper, so as to solve a known good die (KGD) problem of a multi-chip module.

Method for fabricating semiconductor package with stacked chips

The is to disclose a semiconductor package featuring inclusion of light emitter(s) providing light to indicate the states of the semiconductor package as a whole and/or the chip(s) therein. The light emitter is in an original state or flashing state or emitting state according to the states of the semiconductor package as a whole and/or the chip(s). The semiconductor package includes a carrier and a shield structure in addition to the light emitter. The chip and at least part of the carrier are covered by the shield structure. The light emitter may be partially or fully covered or sealed by the shield structure. The light emitter may also be partially or fully exposed. The shield structure is such that the light provided by the light emitter sealed therein can pass therethrough to reach the outside thereof, thereby the states of the semiconductor package as a whole and/or the chip(s) can be recognized from the outside of the semiconductor package.

Semiconductor package including light emitter and IC

A and method for fabricating a warpage-preventive circuit board is provided, wherein a plurality of conductive traces are formed on a surface of an electrically-insulative core layer, and a plurality of discontinuous dummy circuit regions are disposed on the surface of the electrically-insulative core layer at area free of the conductive traces, with adjacent dummy circuit regions being spaced apart by at least a chink. During a high-temperature fabrication process, the dummy circuit regions help reduce thermal stress and the chinks absorb thermal expansion of the dummy circuit regions, to thereby prevent warpage of the circuit board and cracks of a chip mounted on the circuit board, such that yield and reliability of fabricated semiconductor devices can be improved.

Method for fabricating a warpage-preventive circuit board

A printed circuit board and a method for fabricating the same is provided. A substrate having a core layer and a plurality of pairs of bond pads thereon is prepared with at least one opening formed on the core layer between each pair of the bond pads. A solder mask layer covers the core layer and fills the openings, with recessed portions formed at positions of the solder mask layer on the openings during curing of the solder mask layer. When a small passive component is mounted on the printed circuit board, a space is formed between the bottom of the passive component and the recessed portions of the solder mask layer. An encapsulating resin can flow into the space to form an insulating barrier between the bond pads to prevent bridging between the bond pads and short circuiting of the passive component.

Printed circuit board and method for fabricating the same

Semiconductor package with stacked chips and method for fabricating the same

A semiconductor package includes two substrates each having a plurality of electrical connection pads, at least one chip mounted on each of the substrates, an encapsulation body formed on each of the substrates for encapsulating the chip, and an cover for receiving the substrates and the chips therein. The chip is electrically connected to the electrical connection pads. The electrical connection pads are exposed from the cover and located on the same surface or oppositely arranged. The substrates and the cover each substantially has a rectangular shape, with a longer side of each of the substrates being vertical to a longer side of the cover. The semiconductor package is incorporated with multiple chips to enhance the performance and memory capacity thereof, and the substrates are smaller than those in the prior art and thus are more cost-effective to fabricate.

Semiconductor package for memory chips

A multi-chip module is proposed, which is designed to pack two or more semi-conductor chips in a stacked manner over a chip carrier in a single package. The multi-chip module is characterized by the use of adhesive with fillers to allow the topmost chip (i.e. the second chip) superimposed to the bottommost chip (i.e. the first chip) after the first chip electrically connected to the chip carrier. The thickness of the adhesive layer depends on the diameter of the fillers higher than loop height of the bonding wires that is positioned above the active surface of the first chip to prevent the bonding wires connected to the first chip to come in contact with the overlaid chip.

Multichip module

A warpage-preventive circuit board and method for fabricating the same is provided, wherein a plurality of conductive traces are formed on a surface of an electrically-insulative core layer, and a plurality of discontinuous dummy circuit regions are disposed on the surface of the electrically-insulative core layer at area free of the conductive traces, with adjacent dummy circuit regions being spaced apart by at least a chink. During a high-temperature fabrication process, the dummy circuit regions help reduce thermal stress and the chinks absorb thermal expansion of the dummy circuit regions, to thereby prevent warpage of the circuit board and cracks of a chip mounted on the circuit board, such that yield and reliability of fabricated semiconductor devices can be improved.

Warpage-preventive circuit board and method for fabricating the same

A warpage preventing substrate is provided. A plurality of first and second conductive traces are respectively formed on a first surface and a second surface of a core layer of the substrate, each conductive trace having a terminal, and a plurality of first and second non-functional traces are respectively formed on the first and second surfaces of the core layer at area free of the conductive traces. The first non-functional traces are arranged in different density from the second non-functional traces in a manner that, stress generated from the first conductive traces and first non-functional traces counteracts stress generated from the second conductive traces and second non-functional traces, to thereby prevent warpage of the substrate and maintain flatness of the substrate.

Growing community of inventors

Taichung, Taiwan

Chin-Huang Chang